Low On Resistance N Channel Enhancement Mode MOSFET HUAYI HYG032N08NS1P Suitable for Inverter Systems
Key Attributes
Model Number:
HYG032N08NS1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
148pF
Number:
1 N-channel
Input Capacitance(Ciss):
7.52nF
Pd - Power Dissipation:
220.6W
Mfr. Part #:
HYG032N08NS1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG032N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features a low on-resistance of 3 m (typ.) at VGS = 10V, 100% avalanche tested, and is available in lead-free and green (RoHS compliant) versions for reliable and rugged performance.
Product Attributes
- Brand: HYM
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Lead-Free, Green Devices Available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C | - | - | 80 | V |
| Gate-Source Voltage | VGSS | Tc=25C | - | ±20 | ±20 | V |
| Junction Temperature Range | TJ | Tc=25C | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | Tc=25C | -55 | - | 175 | °C |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 180 | A |
| Pulsed Drain Current | IDM | Tc=25°C | - | - | 660 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 180 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 127.3 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 220.6 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 110.3 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 0.68 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on 1in² FR-4 board. | - | 62.5 | - | °C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25°C, RG=25Ω, VGS=10V | - | 607 | - | mJ |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 80 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=80V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=50A | - | 3.0 | 3.4 | mΩ |
| Diode Forward Voltage | VSD | ISD=50A,VGS=0V | - | 0.9 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=50A,dISD/dt=100A/μs | - | 70 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 124 | - | nC |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 3.0 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 7520 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 2640 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 148 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=40V,RG=4Ω, IDS=50A,VGS=10V | - | 24 | - | ns |
| Turn-on Rise Time | Tr | VDD=40V,RG=4Ω, IDS=50A,VGS=10V | - | 112 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=40V,RG=4Ω, IDS=50A,VGS=10V | - | 83 | - | ns |
| Turn-off Fall Time | Tf | VDD=40V,RG=4Ω, IDS=50A,VGS=10V | - | 108 | - | ns |
| Total Gate Charge | Qg | VDS=64V, VGS=10V, IDs=50A | - | 118 | - | nC |
| Gate-Source Charge | Qgs | VDS=64V, VGS=10V, IDs=50A | - | 39 | - | nC |
| Gate-Drain Charge | Qgd | VDS=64V, VGS=10V, IDs=50A | - | 28 | - | nC |
2411220231_HUAYI-HYG032N08NS1P_C5121323.pdf
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