N Channel Enhancement Mode MOSFET HUAYI HYG055N08NS1B with 80V 120A Low On State Resistance
Key Attributes
Model Number:
HYG055N08NS1B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
6.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Output Capacitance(Coss):
1.54nF
Input Capacitance(Ciss):
3.66nF
Pd - Power Dissipation:
187.5W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HYG055N08NS1B
Package:
TO-263-2L
Product Description
Product Overview
The HYG055N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a robust and reliable performance with key advantages such as low on-state resistance (RDS(ON)=5.3 m typ. @ VGS = 10V), 100% avalanche tested, and availability in lead-free and green (RoHS compliant) versions.
Product Attributes
- Brand: HYG
- Origin: China (Huayi Microelectronics Co., Ltd.)
- Certifications: RoHS Compliant, Halogen Free
- Material: Lead-Free and Green Devices Available
Technical Specifications
| Model | Feature | 80V/120A RDS(ON)=5.3 m(typ.)@VGS = 10V | 100% Avalanche Tested | Reliable and Rugged | Lead-Free and Green Devices Available (RoHS Compliant) |
| HYG055N08NS1P/B | N-Channel Enhancement Mode MOSFET | ✔ | ✔ | ✔ | ✔ |
| Symbol | Parameter | Test Conditions | Unit | Min | Typ. | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | Tc=25C Unless Otherwise Noted | V | - | - | 80 |
| VGSS | Gate-Source Voltage | Tc=25C Unless Otherwise Noted | V | - | - | 20 |
| TJ | Junction Temperature Range | Tc=25C Unless Otherwise Noted | C | -55 | - | 175 |
| TSTG | Storage Temperature Range | Tc=25C Unless Otherwise Noted | C | -55 | - | 175 |
| ID | Continuous Drain Current | Tc=25C | A | - | 120 | - |
| ID | Continuous Drain Current | Tc=100C | A | - | 84.8 | - |
| IDM | Pulsed Drain Current | Tc=25C | A | - | - | 400** |
| PD | Maximum Power Dissipation | Tc=25C | W | - | 187.5 | - |
| PD | Maximum Power Dissipation | Tc=100C | W | - | 93.7 | - |
| RJC | Thermal Resistance, Junction-to-Case | - | C/W | - | 0.8 | - |
| RJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on 1in FR-4 board | C/W | - | 62.5** | - |
| EAS | Single Pulsed-Avalanche Energy | L=0.3mH, Limited by TJmax, starting TJ=25C, RG=25, VGS=10V | mJ | - | 350*** | - |
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS= 250A | V | 80 | - | - |
| IDSS | Drain-to-Source Leakage Current | VDS= 80V,VGS=0V | A | - | - | 1 |
| IDSS | Drain-to-Source Leakage Current | TJ=125C, VDS= 80V,VGS=0V | A | - | - | 50 |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS= 250A | V | 2 | 3 | 4 |
| IGSS | Gate-Source Leakage Current | VGS=20V,VDS=0V | nA | - | - | 100 |
| RDS(ON) | Drain-Source On-State Resistance | VGS= 10V,IDS=50A | m | - | 5.3 | 6.8 |
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD=50A,VGS=0V | V | - | 0.92 | 1.2 |
| trr | Reverse Recovery Time | ISD=50A,dISD/dt=100A/s | ns | - | 57 | - |
| Qrr | Reverse Recovery Charge | ISD=50A,dISD/dt=100A/s | nC | - | 98 | - |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS=0V,VDS=0V,F=1MHz | - | 3 | - | |
| Ciss | Input Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 3660 | - |
| Coss | Output Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 1540 | - |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS= 25V, Frequency=1.0MHz | pF | - | 15 | - |
| td(ON) | Turn-on Delay Time | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | ns | - | 16 | - |
| Tr | Turn-on Rise Time | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | ns | - | 89 | - |
| td(OFF) | Turn-off Delay Time | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | ns | - | 44 | - |
| Tf | Turn-off Fall Time | VDD= 40V,RG=4.0, IDS= 50A,VGS= 10V | ns | - | 93 | - |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = 64V, VGS= 10V, IDs= 50A | nC | - | 60 | - |
| Qgs | Gate-Source Charge | VDS = 64V, VGS= 10V, IDs= 50A | nC | - | 20 | - |
| Qgd | Gate-Drain Charge | VDS = 64V, VGS= 10V, IDs= 50A | nC | - | 14 | - |
2410121248_HUAYI-HYG055N08NS1B_C2763408.pdf
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