Power MOSFET HUAYI HYG065P03LQ1C2 featuring P Channel enhancement mode and avalanche tested rugged design
Key Attributes
Model Number:
HYG065P03LQ1C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
RDS(on):
5.9mΩ@10V;9.1mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
142pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
531pF
Pd - Power Dissipation:
57.7W
Input Capacitance(Ciss):
3.598nF
Gate Charge(Qg):
86nC@10V
Mfr. Part #:
HYG065P03LQ1C2
Package:
PPAK-8L(5x6)
Product Description
Product Overview
The HYG065P03LQ1C2 is a single P-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a high continuous drain current of -70A and a low on-resistance of 5.9m (typ.) at VGS = -10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green options available, making it suitable for various power electronics needs.
Product Attributes
- Brand: HYG
- Model: HYG065P03LQ1C2
- Origin: Xi'an Huayi Microelectronics Co., Ltd.
- Certifications: RoHS Compliant, Halogen Free, Green Devices Available
- Package: PPAK5*6-8L
Technical Specifications
| Parameter | Rating | Unit | Conditions |
| Drain-Source Voltage (VDSS) | -30 | V | VGS=0V |
| Gate-Source Voltage (VGSS) | 20 | V | |
| Junction Temperature Range (TJ) | -55 to 175 | C | |
| Storage Temperature Range (TSTG) | -55 to 175 | C | |
| Continuous Drain Current (ID) | -70 | A | Tc=25C |
| Continuous Drain Current (ID) | -49.5 | A | Tc=100C |
| Pulsed Drain Current (IDM) | -280 | A | Tc=25C, pulse width limited by max.junction temperature |
| Maximum Power Dissipation (PD) | 57.7 | W | Tc=25C |
| Maximum Power Dissipation (PD) | 28.8 | W | Tc=100C |
| Thermal Resistance (RJC) | 2.6 | C/W | Junction-to-Case |
| Thermal Resistance (RJA) | 45 | C/W | Junction-to-Ambient, Surface mounted on 1in2 FR-4 board |
| Single Pulsed Avalanche Energy (EAS) | 330 | mJ | L=0.3mH, Limited by TJmax, starting TJ=25C, RG= 25, VGS =-10V |
| Drain-Source Breakdown Voltage (BVDSS) | -30 | V | VGS=0V,IDS=-250uA |
| Drain-to-Source Leakage Current (IDSS) | -1 | uA | VDS=-30V, VGS=0V, TJ=25C |
| Drain-to-Source Leakage Current (IDSS) | -50 | uA | VDS=-30V, VGS=0V, TJ=125C |
| Gate Threshold Voltage (VGS(th)) | -1.5 | V | VDS=VGS, IDS=-250uA |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VGS=20V,VDS=0V |
| Drain-Source On-state Resistance (RDS(ON)) | 5.9 | m | VGS = -10V, ID = -20A |
| Drain-Source On-state Resistance (RDS(ON)) | 9.1 | m | VGS = -4.5V, ID = -20A |
| Diode Forward Voltage (VSD) | -0.85 | V | ISD= -20A,VGS=0V |
| Reverse Recovery Time (trr) | 28 | ns | ISD= -20A,dI/dt=100A/us |
| Reverse Recovery Charge (Qrr) | 25 | nC | ISD= -20A,dI/dt=100A/us |
| Gate Resistance (RG) | 9 | VGS=0V,VDS=0V, Frequency=1.0MHz | |
| Input Capacitance (Ciss) | 3598 | pF | VGS=0V, VDS=-15V, Frequency=1.0MHz |
| Output Capacitance (Coss) | 531 | pF | VGS=0V, VDS=-15V, Frequency=1.0MHz |
| Reverse Transfer Capacitance (Crss) | 142 | pF | VGS=0V, VDS=-15V, Frequency=1.0MHz |
| Turn-on Delay Time (td(ON)) | 12 | ns | VDD= -15V,RG=3, IDS= -20A,VGS=-10V |
| Turn-on Rise Time (Tr) | 19 | ns | VDD= -15V,RG=3, IDS= -20A,VGS=-10V |
| Turn-off Delay Time (td(OFF)) | 83 | ns | VDD= -15V,RG=3, IDS= -20A,VGS=-10V |
| Turn-off Fall Time (Tf) | 34 | ns | VDD= -15V,RG=3, IDS= -20A,VGS=-10V |
| Total Gate Charge (Qg) | 86 | nC | VDS = -24V, VGS= -10V ID= -20A |
| Gate-Source Charge (Qgs) | 8 | nC | VDS = -24V, VGS= -10V ID= -20A |
| Gate-Drain Charge (Qgd) | 22 | nC | VDS = -24V, VGS= -10V ID= -20A |
2410121742_HUAYI-HYG065P03LQ1C2_C5121302.pdf
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