load switch MOSFET HUAYI HYG019N04NR1C2 with 2 milliohms RDS ON and 40V maximum drain source voltage
Key Attributes
Model Number:
HYG019N04NR1C2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
127A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
423pF
Output Capacitance(Coss):
969pF
Input Capacitance(Ciss):
3.384nF
Pd - Power Dissipation:
79W
Gate Charge(Qg):
72.4nC@10V
Mfr. Part #:
HYG019N04NR1C2
Package:
DFN-8(5x6)
Product Description
Product Overview
The HYG019N04NR1C2 is a single N-Channel Enhancement Mode MOSFET from Hymexa. It features high performance with a 40V/127A rating and a low RDS(ON) of 2.0 m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for load switch and battery protection applications.
Product Attributes
- Brand: Hymexa
- Model: HYG019N04NR1C2
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 40 | V | |||
| Gate-Source Voltage (VGSS) | 20 | V | |||
| Junction Temperature Range (TJ) | -55 | 175 | |||
| Storage Temperature Range (TSTG) | -55 | 175 | |||
| Source Current-Continuous (IS) | Tc=25, Mounted on Large Heat Sink | 127 | A | ||
| Pulsed Drain Current (IDM) | Tc=25 | 460 | A | ||
| Continuous Drain Current (ID) | Tc=25 | 127 | A | ||
| Continuous Drain Current (ID) | Tc=100 | 90 | A | ||
| Maximum Power Dissipation (PD) | Tc=25 | 79 | W | ||
| Maximum Power Dissipation (PD) | Tc=100 | 39 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 1.9 | /W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | Surface mounted on FR-4 board | 45 | /W | ||
| Single Pulsed-Avalanche Energy (EAS) | L=0.1mH, starting TJ=25, RG=25, VGS=10V | 308 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | 40 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=40V, VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125 | 50 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, IDS=40A | 2.0 | 2.5 | m | |
| Diode Forward Voltage (VSD) | ISD=40A, VGS=0V | 0.8 | V | ||
| Reverse Recovery Time (trr) | ISD=40A, dISD/dt=100A/s | 21.3 | ns | ||
| Reverse Recovery Charge (Qrr) | 16.8 | nC | |||
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VGS=0V, VDS=0V, F=1MHz | 1.1 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 3384 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 596 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 423 | pF | ||
| Turn-on Delay Time (td(ON)) | VDD=20V, RG=4, IDS=40A, VGS=10V | 19.9 | ns | ||
| Turn-on Rise Time (Tr) | VDD=20V, RG=4, IDS=40A, VGS=10V | 84 | ns | ||
| Turn-off Delay Time (td(OFF)) | VDD=20V, RG=4, IDS=40A, VGS=10V | 33.8 | ns | ||
| Turn-off Fall Time (Tf) | VDD=20V, RG=4, IDS=40A, VGS=10V | 63.1 | ns | ||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS =32V, VGS=10V, IDS=40A | 72.4 | nC | ||
| Gate-Source Charge (Qgs) | VDS =32V, VGS=10V, IDS=40A | 18.4 | nC | ||
| Gate-Drain Charge (Qgd) | VDS =32V, VGS=10V, IDS=40A | 33.3 | nC | ||
2410122027_HUAYI-HYG019N04NR1C2_C2900841.pdf
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