Low RDS ON 5.7 Milliohm N Channel MOSFET HUAYI HY1906C2 Designed for High Frequency Power Conversion
Key Attributes
Model Number:
HY1906C2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
70A
RDS(on):
6.5mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
-
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
360pF
Number:
1 N-channel
Pd - Power Dissipation:
57.7W
Input Capacitance(Ciss):
4.62nF
Gate Charge(Qg):
102nC@10V
Mfr. Part #:
HY1906C2
Package:
DFN-8(5.8x5.9)
Product Description
Product Overview
The HY1906C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 60V/70A rating with a low RDS(ON) of 5.7 m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free options are available.
Product Attributes
- Brand: HUAYI
- Origin: Xi'an Huayi Microelectronics Co., Ltd.
- Certifications: RoHS compliant, Halogen-Free (Green)
- Package: PPAK5*6-8L
Technical Specifications
| Parameter | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 60 | V | |||
| Gate-Source Voltage (VGSS) | 25 | V | |||
| Junction Temperature (TJ) | -55 | 175 | C | ||
| Storage Temperature (TSTG) | -55 | 175 | C | ||
| Source Current-Continuous (IS) | Tc=25C | 70 | A | ||
| Pulsed Drain Current (IDM) | Tc=25C | 260 | A | ||
| Continuous Drain Current (ID) | Tc=25C | 70 | A | ||
| Continuous Drain Current (ID) | Tc=100C | 49.5 | A | ||
| Maximum Power Dissipation (PD) | Tc=25C | 57.7 | W | ||
| Maximum Power Dissipation (PD) | Tc=100C | 28.8 | W | ||
| Thermal Resistance, Junction-to-Case (RJC) | 2.6 | C/W | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | ** | 35 | C/W | ||
| Single-Pulsed-Avalanche Energy (EAS) | L=0.1mH | 286.6 | mJ | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V,IDS=250A | 60 | V | ||
| Drain-to-Source Leakage Current (IDSS) | VDS=60V,VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current (IDSS) | TJ=125C | 50 | A | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | 2 | 3 | 4 | V |
| Gate-Source Leakage Current (IGSS) | VGS=25V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=20A | 5.7 | 6.5 | m | |
| Diode Forward Voltage (VSD*) | ISD=20A,VGS=0V | 0.8 | 1.2 | V | |
| Reverse Recovery Time (trr) | ISD=20A,dISD/dt=100A/s | 50 | ns | ||
| Reverse Recovery Charge (Qrr) | 95 | nC | |||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 0.87 | |||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | 4620 | pF | ||
| Output Capacitance (Coss) | 410 | pF | |||
| Reverse Transfer Capacitance (Crss) | 360 | pF | |||
| Turn-on Delay Time (td(ON)) | VDD=30V,RG=25, IDS=20A,VGS=10V | 21 | ns | ||
| Turn-on Rise Time (Tr) | 28 | ns | |||
| Turn-off Delay Time (td(OFF)) | 35 | ns | |||
| Turn-off Fall Time (Tf) | 31 | ns | |||
| Total Gate Charge (Qg) | VDS =48V, VGS=10V, ID=20A | 102 | nC | ||
| Gate-Source Charge (Qgs) | 18 | nC | |||
| Gate-Drain Charge (Qgd) | 38 | nC | |||
2410121930_HUAYI-HY1906C2_C2887245.pdf
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