Power Management N Channel Enhancement Mode MOSFET HUAYI HY3704P Suitable for Switching Applications
Key Attributes
Model Number:
HY3704P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
176A
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
538pF
Number:
1 N-channel
Output Capacitance(Coss):
1.028nF
Input Capacitance(Ciss):
4.427nF
Pd - Power Dissipation:
192W
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
HY3704P
Package:
TO-220FB-3L
Product Description
Product Overview
The HY3704P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested and features low on-state resistance.
Product Attributes
- Brand: HUAYI
- Origin: China
- Certifications: RoHS Compliant (Lead Free and Green)
- Package Codes: TO-220FB-3L, TO-263-2L
Technical Specifications
| Model | Parameter | Rating | Unit | Conditions |
| HY3704P/B | Drain-Source Voltage (VDSS) | 40 | V | |
| Gate-Source Voltage (VGSS) | 20 | V | ||
| Maximum Junction Temperature (TJ) | 175 | C | ||
| Storage Temperature Range (TSTG) | -55 to 175 | C | ||
| Continuous Drain Current (ID) | 176 | A | TC=25C, Mounted on Large Heat Sink | |
| Continuous Drain Current (ID) | 120 | A | TC=100C | |
| Maximum Power Dissipation (PD) | 192 | W | TC=25C | |
| Maximum Power Dissipation (PD) | 96 | W | TC=100C | |
| Thermal Resistance-Junction to Case (RJC) | 0.78 | C/W | ||
| Thermal Resistance-Junction to Ambient (RJA) | 62.5 | C/W | ||
| Drain-Source On-state Resistance (RDS(ON)) | m (typ.) | VGS=10V | ||
| Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) | 40 | V | VGS=0V, IDS=250A |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VDS=VGS, IDS=250A | |
| Zero Gate Voltage Drain Current (IDSS) | 10 | A | VDS=40V, VGS=0V, TJ=85C | |
| Gate Leakage Current (IGSS) | 100 | nA | VGS=20V, VDS=0V | |
| Diode Forward Voltage (VSD) | 0.8 - 1.2 | V | ISD=88 A, VGS=0V | |
| Dynamic Characteristics | Input Capacitance (Ciss) | 4427 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Output Capacitance (Coss) | 1028 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Reverse Transfer Capacitance (Crss) | 538 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Gate Resistance (RG) | 1.1 | VGS=0V,VDS=0V,F=1MHz | ||
| Gate Charge Characteristics | Total Gate Charge (Qg) | 122 | nC | VDS=32V, VGS=10V, IDS=88A |
| Gate-Source Charge (Qgs) | 29 | nC | VDS=32V, VGS=10V, IDS=88A | |
| Gate-Drain Charge (Qgd) | 35 | nC | VDS=32V, VGS=10V, IDS=88A |
2411220120_HUAYI-HY3704P_C358126.pdf
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