Power Management MOSFET HUAYI HY1310D Featuring Low RDS ON and Robust Avalanche Rating for Industrial
Key Attributes
Model Number:
HY1310D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF
Number:
1 N-channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
3.9nF
Pd - Power Dissipation:
54W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HY1310D
Package:
TO-252-2
Product Description
Product Overview
The HY1310D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers reliable and rugged performance with features like avalanche rating and low RDS(ON). Available in lead-free and green (RoHS compliant) options.
Product Attributes
- Brand: Huayi
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green
Technical Specifications
| Model | Package | VDS (V) | ID (A) TC=25C | ID (A) TC=100C | RDS(ON) (m) VGS=10V | RDS(ON) (m) VGS=4.5V | BVDSS (V) | VGS(th) (V) | EAS (mJ) |
| HY1310D/U/V | TO-251-3S | 100 | 75 | 54 | 19.5 (typ.) | 20.5 (typ.) | 100 | 1.0 - 3.0 | 130 |
2411220243_HUAYI-HY1310D_C358004.pdf
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.