Power MOSFET HUAYI HY3906W N Channel 60V 190A Low RDS ON for Switching and Power Applications
Key Attributes
Model Number:
HY3906W
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
506pF
Number:
-
Output Capacitance(Coss):
1.014nF
Input Capacitance(Ciss):
5.903nF
Pd - Power Dissipation:
283W
Gate Charge(Qg):
135nC@10V
Mfr. Part #:
HY3906W
Package:
TO-247A-3L
Product Description
Product Overview
The HY3906W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers reliable and rugged performance with key features like 60V/190A ratings and low RDS(ON) of 3.5 m (typ.) at VGS=10V. This device is available in Lead Free and Green (RoHS Compliant) options.
Product Attributes
- Brand: HUAYI
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant
Technical Specifications
| Model | Package | VDSS (V) | ID (A) | RDS(ON) (m) | VGS(th) (V) | Ciss (pF) | Coss (pF) | Crss (pF) | Qg (nC) |
| HY3906W/A | TO-247A-3L | 60 | 190 (TC=25C) / 128 (TC=100C) | 3.5 (typ. @ VGS=10V) | 2.0 - 4.0 | 5903 (typ.) | 1014 (typ.) | 506 (typ.) | 135 (typ.) |
| HY3906W/A | TO-3P-3L | 60 | 190 (TC=25C) / 128 (TC=100C) | 3.5 (typ. @ VGS=10V) | 2.0 - 4.0 | 5903 (typ.) | 1014 (typ.) | 506 (typ.) | 135 (typ.) |
2411220235_HUAYI-HY3906W_C2833622.pdf
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