Switch Application N Channel MOSFET HUAYI HY045N10B with 4.2 Milliohm Resistance and 120 Amp Current
Key Attributes
Model Number:
HY045N10B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
174.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.4522nF
Output Capacitance(Coss):
2.842nF
Pd - Power Dissipation:
221W
Gate Charge(Qg):
67.5nC@10V
Mfr. Part #:
HY045N10B
Package:
TO-263-2
Product Description
Product Overview
The HY045N10P/B is an N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It features a 100V/120A rating with a low on-state resistance of 4.2m(typ.)@VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant).
Product Attributes
- Brand: Hymexa
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Model | Package | VDSS (V) | ID (A) @Tc=25C | RDS(ON) (m) @VGS=10V | Application |
| HY045N10P | TO-220FB-3L | 100 | 120 | 4.2 (typ.) | Switch, DC/DC Converter |
| HY045N10B | TO-263-2L | 100 | 120 | 4.2 (typ.) | Switch, DC/DC Converter |
2409302230_HUAYI-HY045N10B_C357999.pdf
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