rugged MOSFET HUAYI HYG092N10LS1C2 for point of load converters power tools and DC DC power systems
Key Attributes
Model Number:
HYG092N10LS1C2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.4pF
Number:
1 N-channel
Output Capacitance(Coss):
437pF
Input Capacitance(Ciss):
2.348nF
Pd - Power Dissipation:
62.5W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
HYG092N10LS1C2
Package:
PDFN-8(5.9x5.2)
Product Description
Product Overview
The HYG092N10LS1C2 is a single N-Channel enhancement mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It features a low RDS(ON) of 7.8 m (typ.) at VGS = 10V and 11.5 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, making it RoHS compliant.
Product Attributes
- Brand: HYG/HUAYI
- Package Type: PDFN8L (5x6)
- Certifications: RoHS Compliant, Halogen-Free
- Material: Lead-free (100% matte tin termination finish)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Maximum Junction Temperature | TJ | 175 | °C | |||
| Storage Temperature Range | TSTG | -55 | 175 | °C | ||
| Source Current-Continuous (Body Diode) | IS | TC=25°C, Mounted on Large Heat Sink | 60 | A | ||
| Pulsed Drain Current | IDM | TC=25°C * | 220 | A | ||
| Continuous Drain Current | ID | TC=25°C | 60 | A | ||
| Continuous Drain Current | ID | TC=100°C | 42 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 62.5 | W | ||
| Maximum Power Dissipation | PD | TC=100°C | 31.2 | W | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.4 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | ** | 50 | °C/W | ||
| Single Pulsed Avalanche Energy | EAS | *** L=0.3mH | 164.2 | mJ | ||
| Electrical Characteristics (TC =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=100V, VGS=0V | - | 1 | μA | |
| Drain-to-Source Leakage Current | IDSS | TJ=100°C | - | 50 | μA | |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1.0 | 1.6 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | 100 | nA | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=10V, IDS=20A | 7.8 | 9.6 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON)* | VGS=4.5V, IDS=20A | 11.5 | 14 | mΩ | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD* | ISD=20A, VGS=0V | 0.84 | 1.3 | V | |
| Reverse Recovery Time | trr | ISD=20A, dISD/dt=100A/μs | 40.4 | - | ns | |
| Reverse Recovery Charge | Qrr | 48 | - | nC | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V, VDS=0V, F=1MHz | 1.7 | - | Ω | |
| Input Capacitance | Ciss | VGS=0V, VDS=50V, Frequency=1.0MHz | 2348 | - | pF | |
| Output Capacitance | Coss | 437 | - | pF | ||
| Reverse Transfer Capacitance | Crss | 12.4 | - | pF | ||
| Turn-on Delay Time | td(ON) | VDD=50V, RG=4Ω, IDS=20A, VGS=10V | 12.1 | - | ns | |
| Turn-on Rise Time | tr | 35.5 | - | ns | ||
| Turn-off Delay Time | td(OFF) | 42 | - | ns | ||
| Turn-off Fall Time | tf | 87 | - | ns | ||
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg(10V) | VDS =50V, VGS=10V, ID=20A | 47 | - | nC | |
| Total Gate Charge | Qg(4.5V) | 25 | - | nC | ||
| Gate-Source Charge | Qgs | 8.2 | - | nC | ||
| Gate-Drain Charge | Qgd | 13.4 | - | nC | ||
2411220405_HUAYI-HYG092N10LS1C2_C2827247.pdf
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