N Channel Enhancement Mode MOSFET HUAYI HY4008B6 with 80V Voltage Rating and 255A Continuous Current
Key Attributes
Model Number:
HY4008B6
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
255A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
822pF@25V
Number:
-
Input Capacitance(Ciss):
7.457nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
209nC@10V
Mfr. Part #:
HY4008B6
Package:
TO-263-6
Product Description
Product Overview
The HY4008B6 is a N-Channel Enhancement Mode MOSFET from HUAYI, designed for switch applications and brushless motor drives. It offers high performance with a voltage rating of 80V and a continuous current of 255A, featuring low on-resistance (RDS(ON)= 2.6m typ. @VGS = 10V). This device is 100% avalanche tested, reliable, and rugged. Lead-Free and Green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HUAYI
- Model: HY4008B6
- Package Type: TO-263-6L
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Lead Free and Green Devices Available (RoHS Compliant)
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ. | Max | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage (VDSS) | V | 80 | ||||
| Gate-Source Voltage (VGSS) | V | 25 | ||||
| Maximum Junction Temperature (TJ) | C | 175 | ||||
| Storage Temperature Range (TSTG) | C | -55 | 175 | |||
| Source Current-Continuous (IS) | Tc=25C, Mounted on Large Heat Sink | A | 255 | |||
| Pulsed Drain Current (IDM) | Tc=25C | A | 918 | |||
| Continuous Drain Current (ID) | Tc=25C | A | 255 | |||
| Continuous Drain Current (ID) | Tc=100C | A | 180 | |||
| Maximum Power Dissipation (PD) | Tc=25C | W | 375 | |||
| Maximum Power Dissipation (PD) | Tc=100C | W | 187 | |||
| Thermal Resistance, Junction-to-Case (RTJC) | C/W | 0.40 | ||||
| Thermal Resistance, Junction-to-Ambient (RTJA) | Surface mounted on FR-4 board | C/W | 40 | |||
| Single Pulsed-Avalanche Energy (EAS) | L=0.5mH, Starting TJ=25C, RG=25, VGS=10V | mJ | 1512 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=250A | V | 80 | |||
| Drain-to-Source Leakage Current (IDSS) | VDS=80V,VGS=0V | A | 1 | |||
| Drain-to-Source Leakage Current (IDSS) | TJ=55C, VDS=80V,VGS=0V | A | 5 | |||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=250A | V | 2 | 3 | 4 | |
| Gate-Source Leakage Current (IGSS) | VGS=25V,VDS=0V | nA | 100 | |||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V,IDS=110A | m | 2.6 | 3.2 | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage (VSD) | ISD=110A,VGS=0V | V | 0.8 | 1.2 | ||
| Reverse Recovery Time (trr) | ISD=110A,dISD/dt=100A/s | ns | 30 | |||
| Reverse Recovery Charge (Qrr) | ISD=110A,dISD/dt=100A/s | nC | 52 | |||
| Dynamic Characteristics | ||||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1 MHz | 1.9 | ||||
| Input Capacitance (Ciss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 7457 | |||
| Output Capacitance (Coss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 1217 | |||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=25V, Frequency=1.0MHz | pF | 822 | |||
| Turn-on Delay Time (td(ON)) | VDD=50V,RG=6, IDS=110A,VGS=10V | ns | 28 | |||
| Turn-on Rise Time (Tr) | VDD=50V,RG=6, IDS=110A,VGS=10V | ns | 18 | |||
| Turn-off Delay Time (td(OFF)) | VDD=50V,RG=6, IDS=110A,VGS=10V | ns | 42 | |||
| Turn-off Fall Time (Tf) | VDD=50V,RG=6, IDS=110A,VGS=10V | ns | 54 | |||
| Gate Charge Characteristics | ||||||
| Total Gate Charge (Qg) | VDS =64V, VGS=10V, ID=110A | nC | 209 | |||
| Gate-Source Charge (Qgs) | VDS =64V, VGS=10V, ID=110A | nC | 33 | |||
| Gate-Drain Charge (Qgd) | VDS =64V, VGS=10V, ID=110A | nC | 83 | |||
2411192313_HUAYI-HY4008B6_C2827228.pdf
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