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quality Silicon NPN Bipolar Transistor Array Infineon BCM 846S H6327 Suitable For Current Mirror Applications factory
quality Silicon NPN Bipolar Transistor Array Infineon BCM 846S H6327 Suitable For Current Mirror Applications factory

Silicon NPN Bipolar Transistor Array Infineon BCM 846S H6327 Suitable For Current Mirror Applications

Key Attributes
Model Number: BCM 846S H6327
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
250MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BCM 846S H6327
Package:
SOT-363
Product Description

Product Overview

The BCM846S is a silicon NPN bipolar transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation voltage, and two internally isolated transistors. This device is Pb-free and RoHS compliant, qualified according to AEC Q101 standards.

Product Attributes

  • Brand: Infineon Technologies
  • Complementary Type: BCM856S
  • Material: Silicon
  • Certifications: AEC Q101
  • Package: SOT363
  • RoHS Compliant: Yes

Technical Specifications

ParameterSymbolValueUnitConditions
Maximum Ratings
Collector-emitter voltageVCEO65V
Collector-emitter voltageVCES80V
Collector-base voltageVCBO80V
Emitter-base voltageVEBO6V
Collector currentIC100mA
Peak collector currentICM200mAtp 10 ms
Total power dissipationPtot250mWTS = 115 C
Junction temperatureTj150C
Storage temperatureTstg-65 ... 150C
Thermal Resistance
Junction - soldering pointRthJS140K/W1)
DC Characteristics
Collector-emitter breakdown voltageV(BR)CEO65VIC = 10 mA, IB = 0 A
Collector-base breakdown voltageV(BR)CBO80VIC = 10 A, IE = 0 A
Collector-emitter breakdown voltageV(BR)CES80VIC = 10 A, VBE = 0 A
Emitter-base breakdown voltageV(BR)EBO6VIE = 10 A, IC = 0 A
Collector-base cutoff currentICBO-AVCB = 30 V, IE = 0 A
Collector-base cutoff currentICBO0.015AVCB = 30 V, IE = 0 A, TA = 150 C
Collector-base cutoff currentICBO5AVCB = 30 V, IE = 0 A, TA = 150 C
DC current gainhFE200-IC = 10 A, VCE = 5 V
DC current gainhFE250 ... 290-IC = 2 mA, VCE = 5 V
DC current gainhFE450-IC = 10 mA, VCE = 5 V
Collector-emitter saturation voltageVCEsat90mVIC = 10 mA, IB = 0.5 mA
Collector-emitter saturation voltageVCEsat200 ... 300mVIC = 100 mA, IB = 5 mA
Collector-emitter saturation voltageVCEsat650mVIC = 100 mA, IB = 5 mA
Base emitter saturation voltageVBEsat700mVIC = 10 mA, IB = 0.5 mA
Base emitter saturation voltageVBEsat900mVIC = 100 mA, IB = 5 mA
Base-emitter voltageVBE(ON)580 ... 660mVIC = 2 mA, VCE = 5 V
Base-emitter voltageVBE(ON)700 ... 770mVIC = 10 mA, VCE = 5 V
MatchingIC-10 ... 10%IB = 1 A, VCE1 = VCE2 = 1.0V
MatchingIC-10 ... 10%IB = 100 A, VCE1 = VCE2 = 1.0V
AC Characteristics
Transition frequencyfT250MHzIC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitanceCcb0.95pFVCB = 10 V, f = 1 MHz
Emitter-base capacitanceCeb9pFVEB = 0.5 V, f = 1 MHz
Short-circuit input impedanceh11e4.5kIC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratioh12e2 x 10-IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratioh12e10 x 10-IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratioh21e330-IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittanceh22e30SIC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figureF10dBIC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k

2410121717_Infineon-BCM-846S-H6327_C533784.pdf

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