power MOSFET HUAYI HYG072N08NR1P designed for inverter systems electric vehicle controllers and lithium battery protection

Key Attributes
Model Number: HYG072N08NR1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
164pF
Number:
1 N-channel
Output Capacitance(Coss):
365pF
Input Capacitance(Ciss):
2.77nF
Pd - Power Dissipation:
188W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
HYG072N08NR1P
Package:
TO-220FB-3L
Product Description

Product Overview

The HYG1N15P3 is a single channel enhancement mode MOSFET designed for various power management applications. It offers high reliability, ruggedness, and is available in lead-free devices. This MOSFET is compliant with RoHS standards and is suitable for use in inverter systems, electric vehicle controllers, and lithium battery protection boards.

Product Attributes

  • Brand: HYG
  • Origin: China
  • Certifications: RoHS Compliant, Halogen Free
  • Material: Lead-Free Devices Available

Technical Specifications

SymbolParameterRating UnitTest ConditionsMinTypMax
Absolute Maximum Ratings
TcCase Temperature–Unless Otherwise Noted–––
VDSSDrain Source VoltageV–––60
VGSSGate Source Voltage––––±20
TJMaximum Junction Temperature°C–––150
TSTGStorage Temperature Range°C–––-55 to 150
IDSource Current Continuous (Body Diode)ATc=25°C––8
IDMPulsed Drain CurrentATc=25°C––32
IDContinuous Drain CurrentATc=25°C––8
IDContinuous Drain CurrentATc=100°C––5.6
PDMaximum Power DissipationWTc=25°C––25
PDMaximum Power DissipationWTc=100°C––12.5
RθJCThermal Resistance, Junction to Case°C/W––5–
RθJAThermal Resistance, Junction to Ambient°C/WMounted on Large Heat Sink–62.5–
EASSingle Pulsed Avalanche EnergymJL=1mH–15–
Electrical Characteristics
TCCase Temperature°CUnless Otherwise Noted–––
BVDSSDrain Source Breakdown VoltageVVGS=0, ID=250µA60––
IDSSDrain to Source Leakage CurrentµAVDS=60V, VGS=0, TJ=25°C––1
IDSSDrain to Source Leakage CurrentµAVDS=60V, VGS=0, TJ=100°C––10
VGS(th)Gate Threshold VoltageVVDS=20V, ID=250µ µA22.53
IGSSGate Source Leakage CurrentnAVGS=±20V, VDS=0––±100
RDS(ON)Drain Source On State ResistancemΩVGS=10V, ID=4A–1520
VSGDiode Forward VoltageVISD=8A, VGS=0–0.81.2
trrReverse Recovery TimensISD=8A, dISD/dt=100A/µs––300
QrrReverse Recovery ChargenCISD=8A, dISD/dt=100A/µs––50
Dynamic Characteristics
QgTotal Gate ChargenCVDS=30V, VGS=10V, IDS=4A–12–
CissInput CapacitancepFVGS=0, VDS=25V, f=1MHz–200–
CossOutput CapacitancepFVGS=0, VDS=25V, f=1MHz–50–
CrssReverse Transfer CapacitancepFVGS=0, VDS=25V, f=1MHz–15–
td(on)Turn on Delay TimensVDD=30V, RG=10Ω, ID=4A, VGS=10V–5–
trTurn on Rise TimensVDD=30V, RG=10Ω, ID=4A, VGS=10V–10–
td(off)Turn off Delay TimensVDD=30V, RG=10Ω, ID=4A, VGS=10V–15–
tfTurn off Fall TimensVDD=30V, RG=10Ω, ID=4A, VGS=10V–10–
QgsGate Source ChargenCVDS=30V, IDS=4A–2–
QgdGate Drain ChargenCVDS=30V, IDS=4A–3–

2410010001_HUAYI-HYG072N08NR1P_C2857454.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.