power MOSFET HUAYI HYG072N08NR1P designed for inverter systems electric vehicle controllers and lithium battery protection
Key Attributes
Model Number:
HYG072N08NR1P
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
164pF
Number:
1 N-channel
Output Capacitance(Coss):
365pF
Input Capacitance(Ciss):
2.77nF
Pd - Power Dissipation:
188W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
HYG072N08NR1P
Package:
TO-220FB-3L
Product Description
Product Overview
The HYG1N15P3 is a single channel enhancement mode MOSFET designed for various power management applications. It offers high reliability, ruggedness, and is available in lead-free devices. This MOSFET is compliant with RoHS standards and is suitable for use in inverter systems, electric vehicle controllers, and lithium battery protection boards.
Product Attributes
- Brand: HYG
- Origin: China
- Certifications: RoHS Compliant, Halogen Free
- Material: Lead-Free Devices Available
Technical Specifications
| Symbol | Parameter | Rating Unit | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||
| Tc | Case Temperature | – | Unless Otherwise Noted | – | – | – |
| VDSS | Drain Source Voltage | V | – | – | – | 60 |
| VGSS | Gate Source Voltage | – | – | – | – | ±20 |
| TJ | Maximum Junction Temperature | °C | – | – | – | 150 |
| TSTG | Storage Temperature Range | °C | – | – | – | -55 to 150 |
| ID | Source Current Continuous (Body Diode) | A | Tc=25°C | – | – | 8 |
| IDM | Pulsed Drain Current | A | Tc=25°C | – | – | 32 |
| ID | Continuous Drain Current | A | Tc=25°C | – | – | 8 |
| ID | Continuous Drain Current | A | Tc=100°C | – | – | 5.6 |
| PD | Maximum Power Dissipation | W | Tc=25°C | – | – | 25 |
| PD | Maximum Power Dissipation | W | Tc=100°C | – | – | 12.5 |
| RθJC | Thermal Resistance, Junction to Case | °C/W | – | – | 5 | – |
| RθJA | Thermal Resistance, Junction to Ambient | °C/W | Mounted on Large Heat Sink | – | 62.5 | – |
| EAS | Single Pulsed Avalanche Energy | mJ | L=1mH | – | 15 | – |
| Electrical Characteristics | ||||||
| TC | Case Temperature | °C | Unless Otherwise Noted | – | – | – |
| BVDSS | Drain Source Breakdown Voltage | V | VGS=0, ID=250µA | 60 | – | – |
| IDSS | Drain to Source Leakage Current | µA | VDS=60V, VGS=0, TJ=25°C | – | – | 1 |
| IDSS | Drain to Source Leakage Current | µA | VDS=60V, VGS=0, TJ=100°C | – | – | 10 |
| VGS(th) | Gate Threshold Voltage | V | VDS=20V, ID=250µ µA | 2 | 2.5 | 3 |
| IGSS | Gate Source Leakage Current | nA | VGS=±20V, VDS=0 | – | – | ±100 |
| RDS(ON) | Drain Source On State Resistance | mΩ | VGS=10V, ID=4A | – | 15 | 20 |
| VSG | Diode Forward Voltage | V | ISD=8A, VGS=0 | – | 0.8 | 1.2 |
| trr | Reverse Recovery Time | ns | ISD=8A, dISD/dt=100A/µs | – | – | 300 |
| Qrr | Reverse Recovery Charge | nC | ISD=8A, dISD/dt=100A/µs | – | – | 50 |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge | nC | VDS=30V, VGS=10V, IDS=4A | – | 12 | – |
| Ciss | Input Capacitance | pF | VGS=0, VDS=25V, f=1MHz | – | 200 | – |
| Coss | Output Capacitance | pF | VGS=0, VDS=25V, f=1MHz | – | 50 | – |
| Crss | Reverse Transfer Capacitance | pF | VGS=0, VDS=25V, f=1MHz | – | 15 | – |
| td(on) | Turn on Delay Time | ns | VDD=30V, RG=10Ω, ID=4A, VGS=10V | – | 5 | – |
| tr | Turn on Rise Time | ns | VDD=30V, RG=10Ω, ID=4A, VGS=10V | – | 10 | – |
| td(off) | Turn off Delay Time | ns | VDD=30V, RG=10Ω, ID=4A, VGS=10V | – | 15 | – |
| tf | Turn off Fall Time | ns | VDD=30V, RG=10Ω, ID=4A, VGS=10V | – | 10 | – |
| Qgs | Gate Source Charge | nC | VDS=30V, IDS=4A | – | 2 | – |
| Qgd | Gate Drain Charge | nC | VDS=30V, IDS=4A | – | 3 | – |
2410010001_HUAYI-HYG072N08NR1P_C2857454.pdf
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