Broadband amplifier RF transistor Infineon BFS17PE6327HTSA1 NPN Silicon for sub GHz mixer applications
Key Attributes
Model Number:
BFS17PE6327HTSA1
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2.5V
Pd - Power Dissipation:
280mW
Transition Frequency(fT):
1.4GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
25mA
Collector - Emitter Voltage VCEO:
15V
Mfr. Part #:
BFS17PE6327HTSA1
Package:
SOT-23
Product Description
Product Overview
The BFS17P is an NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise figure and high intercept point, making it suitable for demanding RF designs.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Certifications: Pb-free (RoHS compliant)
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Value | Unit | Note or Test Condition |
| Maximum collector-emitter voltage | VCEO | 15 | V | |
| Maximum collector current | IC | 25 | mA | |
| Noise figure | NF | 3.5 | dB | IC = 2 mA, VCE = 5 V, ZS = 50, f = 800 MHz |
| 3rd order output intercept point | OIP3 | 21.5 | dBm | VCE = 5 V, IC = 20 mA, f = 800 MHz, ZS = ZSopt, ZL = ZLopt |
| 1 dB output compression point | P-1dB | 10 | dBm | IC = 20 mA, VCE = 5 V, ZS = ZL = 50, f = 800 MHz |
| Transition frequency | fT | 1.4 | GHz | IC = 2 mA, VCE = 5 V, f = 200 MHz |
| Maximum total power dissipation | Ptot | 280 | mW | TS 95 C |
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 |
| DC current gain | hFE | 40 - 150 | IC = 2 mA, VCE = 1 V pulse measured | |
| Collector-emitter saturation voltage | VCEsat | 0.1 - 0.4 | V | IC = 10 mA, IB = 1 mA |
| Collector-base capacitance | Ccb | 0.55 - 0.8 | pF | VCB = 5 V, f = 1 MHz, VBE = 0 , emitter grounded |
| Emitter-base capacitance | Ceb | 0.9 - 1.45 | pF | VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded |
2304140030_Infineon-BFS17PE6327HTSA1_C151490.pdf
Related Products
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
