150V N Channel MOSFET HUAYI HYG065N15NS1B6 with 6 Milliohm On Resistance and 165A Continuous Current
Key Attributes
Model Number:
HYG065N15NS1B6
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
165A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF
Number:
-
Output Capacitance(Coss):
888pF
Input Capacitance(Ciss):
6.646nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
HYG065N15NS1B6
Package:
TO-263-6
Product Description
Product Overview
The HYG065N15NS1B6 is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 150V and a continuous drain current of 165A, with a low on-resistance of 6.0m (typ.) at VGS = 10V. This device is 100% avalanche tested, offering reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.
Product Attributes
- Brand: HYM (Huayi Microelectronics Co., Ltd.)
- Origin: China
- Material: Lead-Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, Halogen Free
Technical Specifications
| Model | Feature | RDS(ON) | VDSS | ID (Tc=25C) | VGS(th) | EAS |
| HYG065N15NS1B6 | N-Channel Enhancement Mode MOSFET, 100% Avalanche Tested, Reliable and Rugged | 6.0m (typ.) @ VGS = 10V | 150 V | 165 A | 2 - 4 V | 1134 mJ (L=0.3mH) |
2411220051_HUAYI-HYG065N15NS1B6_C2827244.pdf
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