N Channel Enhancement Mode MOSFET HUAYI HY4504B Ideal for DC DC Converter and Switching Applications
Key Attributes
Model Number:
HY4504B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
250A
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
682pF
Number:
1 N-channel
Output Capacitance(Coss):
1.863nF
Input Capacitance(Ciss):
6.985nF
Pd - Power Dissipation:
288W
Gate Charge(Qg):
195nC@10V
Mfr. Part #:
HY4504B
Package:
TO-263-2L
Product Description
Product Overview
The HY4504P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low on-resistance, high current capability, and a reliable, rugged design. Lead-Free and Green devices are available, ensuring RoHS compliance.
Product Attributes
- Brand: HY (HUAYI)
- Origin: China
- Material: Lead Free and Green Devices Available (RoHS Compliant)
- Certifications: RoHS Compliant, IPC/JEDEC J-STD-020 compliant for MSL classification
Technical Specifications
| Model | Parameter | Rating | Unit | Conditions |
| HY4504P/B | Drain-Source Voltage (VDSS) | 40 | V | |
| Gate-Source Voltage (VGSS) | 20 | V | ||
| Maximum Junction Temperature (TJ) | 175 | C | ||
| Storage Temperature Range (TSTG) | -55 to 175 | C | ||
| Diode Continuous Forward Current (IS) | 250 | A | TC=25C, Mounted on Large Heat Sink | |
| Continuous Drain Current (ID) | 250 / 162 | A | TC=25C / TC=100C | |
| Maximum Power Dissipation (PD) | 288 / 144 | W | TC=25C / TC=100C | |
| Thermal Resistance-Junction to Case (RJC) | 0.52 | C/W | ||
| Thermal Resistance-Junction to Ambient (RJA) | 62.5 | C/W | ||
| Avalanche Energy (EAS) | - | mJ | L=0.5mH | |
| HY4504P/B | Drain-Source Breakdown Voltage (BVDSS) | 40 | V | VGS=0V, IDS=250A |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS=40V, VGS=0V, TJ=85C | |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VDS=VGS, IDS=250A | |
| Gate Leakage Current (IGSS) | 100 | nA | VGS=20V, VDS=0V | |
| Drain-Source On-state Resistance (RDS(ON)) | 2.3 (typ.) | m | VGS=10V, IDS=125A | |
| Diode Forward Voltage (VSD) | 0.8 - 1.2 | V | ISD=125A, VGS=0V | |
| Reverse Recovery Time (trr) | 38 | ns | ISD=125A, dlSD/dt=100A/s | |
| Reverse Recovery Charge (Qrr) | 62 | nC | ISD=125A, dlSD/dt=100A/s | |
| HY4504P/B | Input Capacitance (Ciss) | 6985 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz |
| Output Capacitance (Coss) | 1863 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Reverse Transfer Capacitance (Crss) | 682 | pF | VGS=0V, VDS=25V, Frequency=1.0MHz | |
| Turn-on Delay Time (td(ON)) | 35 | ns | VDD=20V, RG=6, IDS=125A, VGS=10V | |
| Turn-on Rise Time (Tr) | 62 | ns | VDD=20V, RG=6, IDS=125A, VGS=10V | |
| Total Gate Charge (Qg) | 195 | nC | VDS=32V, VGS=10V, IDS=125A |
2410121812_HUAYI-HY4504B_C358122.pdf
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