High Cell Density Single N Channel Enhancement Mode MOSFET HUAYI HY1303C for Battery Pack Protection
Key Attributes
Model Number:
HY1303C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
146pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.351nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
HY1303C
Package:
DFN-8(3x3)
Product Description
Product Overview
The HY1303C is a single N-Channel Enhancement Mode MOSFET featuring high cell density for low Rds(on). It is designed for applications requiring efficient power switching and is suitable for battery pack protection and power tools.
Product Attributes
- Brand: Halogen Device Available (implied by HY1303C and www.hymexa.com)
- Certifications: RoHS compliant, Halogen Free
- Material: Lead-free product with 100% matte tin plate termination finish
Technical Specifications
| Model | Type | VDS (V) | RDS(ON) (m) @ VGS=10V | RDS(ON) (m) @ VGS=4.5V | ID (A) @ TC=25C | Package |
| HY1303C | Single N-Channel Enhancement Mode MOSFET | 30 | 4.2 (typ.) | 5.5 (typ.) | 30 | DFN3*3-8L |
2411220202_HUAYI-HY1303C_C358005.pdf
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