Power Management MOSFET HUAYI HY3203C2 with 30V Drain Source Voltage and Avalanche Tested Reliability
Key Attributes
Model Number:
HY3203C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
322pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.726nF
Pd - Power Dissipation:
52W
Mfr. Part #:
HY3203C2
Package:
PPAK-8L(5x6)
Product Description
Product Overview
The HY3203C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management for DC/DC converters. It offers a low on-resistance of 1.9m (typ.) at VGS = 10V and 2.5m (typ.) at VGS = 4.5V, with a drain-source voltage of 30V and a continuous drain current of 120A. This device is 100% avalanche tested, reliable, and rugged. Halogen-free options are available.
Product Attributes
- Brand: HY (HUAYI)
- Origin: China
- Material: Halogen-Free Devices Available (compliant with RoHS)
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Maximum Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | 120 | A | ||
| Pulsed Drain Current | IDM | Tc=25C | 480 | A | ||
| Continuous Drain Current | ID | Tc=25C | 120 | A | ||
| Continuous Drain Current | ID | Tc=100C | 80 | A | ||
| Maximum Power Dissipation | PD | Tc=25C | 52 | W | ||
| Maximum Power Dissipation | PD | Tc=100C | 21 | W | ||
| Thermal Resistance, Junction-to-Case | RTJC | 2.4 | C/W | |||
| Thermal Resistance, Junction-to-Ambient | RTJA | Surface mounted on 1in FR-4 board | 45 | C/W | ||
| Single Pulsed-Avalanche Energy | EAS | L=0.1mH, Limited by TJmax, starting TJ=25C, L=0.1mH, RG=25, VGS=10V | 322 | mJ | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250A | 30 | V | ||
| Drain-to-Source Leakage Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Drain-to-Source Leakage Current | IDSS | TJ=55C, VDS=30V,VGS=0V | 5 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 1.4 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | 1.9 | 2.4 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | 2.5 | 3.2 | m | |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | 0.8 | 1.2 | V | |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | 23 | ns | ||
| Reverse Recovery Charge | Qrr | ISD=20A,dISD/dt=100A/s | 58 | nC | ||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | 1.9 | |||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | 4726 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | 469 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | 322 | pF | ||
| Turn-on Delay Time | td(ON) | VDD=20V,RG=3.3, IDS=20A,VGS=10V | 13 | ns | ||
| Turn-on Rise Time | Tr | VDD=20V,RG=3.3, IDS=20A,VGS=10V | 11 | ns | ||
| Turn-off Delay Time | td(OFF) | VDD=20V,RG=3.3, IDS=20A,VGS=10V | 41 | ns | ||
| Turn-off Fall Time | Tf | VDD=20V,RG=3.3, IDS=20A,VGS=10V | 14 | ns | ||
| Total Gate Charge | Qg | VDS =24V, VGS=10V, ID=20A | 120 | nC | ||
| Gate-Source Charge | Qgs | VDS =24V, VGS=10V, ID=20A | 9 | nC | ||
| Gate-Drain Charge | Qgd | VDS =24V, VGS=10V, ID=20A | 26 | nC |
2411220235_HUAYI-HY3203C2_C358000.pdf
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