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quality High Current MOSFET HUAYI HYG032N08NS1B Featuring Low On Resistance and Avalanche Tested Reliability factory
quality High Current MOSFET HUAYI HYG032N08NS1B Featuring Low On Resistance and Avalanche Tested Reliability factory

High Current MOSFET HUAYI HYG032N08NS1B Featuring Low On Resistance and Avalanche Tested Reliability

Key Attributes
Model Number: HYG032N08NS1B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
148pF
Output Capacitance(Coss):
2.64nF
Input Capacitance(Ciss):
7.52nF
Pd - Power Dissipation:
220.6W
Gate Charge(Qg):
118nC@10V
Mfr. Part #:
HYG032N08NS1B
Package:
TO-263-2L
Product Description

Product Overview

The HYG032N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features a high continuous drain current of 180A and a low on-state resistance of 3 m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, reliable, and rugged, with lead-free and green device options available (RoHS compliant).

Product Attributes

  • Brand: HYM
  • Origin: China (Huayi Microelectronics Co., Ltd.)
  • Certifications: RoHS Compliant, Lead-Free, Green Devices Available

Technical Specifications

ParameterSymbolTest ConditionsMinTyp.MaxUnit
Absolute Maximum Ratings
Drain-Source VoltageVDSSTc=25C Unless Otherwise Noted--80V
Gate-Source VoltageVGSSTc=25C Unless Otherwise Noted-±20-V
Junction Temperature RangeTJTc=25C Unless Otherwise Noted-55-175�B0;C
Storage Temperature RangeTSTGTc=25C Unless Otherwise Noted-55-175�B0;C
Source Current-Continuous(Body Diode)ISTc=25C, Mounted on Large Heat Sink--180A
Pulsed Drain CurrentIDMTc=25C--660A
Continuous Drain CurrentIDTc=25C--180A
Continuous Drain CurrentIDTc=100C--127.3A
Maximum Power DissipationPDTc=25C--220.6W
Maximum Power DissipationPDTc=100C--110.3W
Thermal Resistance, Junction-to-CaseRθJC--0.68-�B0;C/W
Thermal Resistance, Junction-to-AmbientRθJASurface mounted on 1in�B2; FR-4 board.-62.5-�B0;C/W
Single Pulsed-Avalanche EnergyEASL=0.3mH, Limited by TJmax , starting TJ=25�B0;C, L = 0.3mH, RG= 25Ω, VGS =10V.-607-mJ
Electrical Characteristics
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS= 250μA80--V
Drain-to-Source Leakage CurrentIDSSVDS= 80V,VGS=0V--1μA
Drain-to-Source Leakage CurrentIDSSTJ=125�B0;C--50μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS= 250μA234V
Gate-Source Leakage CurrentIGSSVGS=±20V,VDS=0V--±100nA
Drain-Source On-State ResistanceRDS(ON)VGS= 10V,IDS= 50A-3.03.4mΩ
Diode Forward VoltageVSDISD=50A,VGS=0V-0.91.2V
Reverse Recovery TimetrrISD=50A,dISD/dt=100A/μs-70-ns
Reverse Recovery ChargeQrr--124-nC
Gate ResistanceRGVGS=0V,VDS=0V,F=1MHz-3.0-Ω
Input CapacitanceCissVGS=0V, VDS= 25V, Frequency=1.0MHz--7520pF
Output CapacitanceCoss---2640pF
Reverse Transfer CapacitanceCrss---148pF
Turn-on Delay Timetd(ON)VDD= 40V,RG=4Ω, IDS= 50A,VGS= 10V-24-ns
Turn-on Rise TimeTr--112-ns
Turn-off Delay Timetd(OFF)--83-ns
Turn-off Fall TimeTf--108-ns
Total Gate ChargeQgVDS = 64V, VGS= 10V, IDs= 50A-118-nC
Gate-Source ChargeQgs--39-nC
Gate-Drain ChargeQgd--28-nC

2410121248_HUAYI-HYG032N08NS1B_C2763416.pdf

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