P Channel Enhancement Mode MOSFET HUAYI HY12P03S with High Junction Temperature and Avalanche Rating
Key Attributes
Model Number:
HY12P03S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
20.5mΩ@4.5V,7A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
295pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.4nF
Output Capacitance(Coss):
370pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
HY12P03S
Package:
SOP-8
Product Description
HOOYI HY12P03S P-Channel Enhancement Mode MOSFET
The HOOYI HY12P03S is a P-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers a reliable and rugged solution with features such as low on-state resistance and avalanche rating. Available in a SOP-8 package, this device is lead-free and RoHS compliant.
Product Attributes
- Brand: HOOYI
- Product Code: HY12P03S
- Package: SOP-8
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | -30 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Maximum Junction Temperature (TJ) | 150 | °C | |||
| Storage Temperature Range (TSTG) | -55 | 150 | °C | ||
| Diode Continuous Forward Current (IS) | TC=25°C | -12 | A | ||
| Continuous Drain Current (ID) | TC=25°C | -12 | A | ||
| Continuous Drain Current (ID) | TC=70°C | -10 | A | ||
| Maximum Power Dissipation (PD) | TC=25°C | 3.1 | W | ||
| Maximum Power Dissipation (PD) | TC=70°C | 2.0 | W | ||
| Thermal Resistance-Junction to Case (RθJC) | 40 | °C/W | |||
| Thermal Resistance-Junction to Ambient (RθJA) | 75 | °C/W | |||
| Avalanche Energy, Single Pulsed (EAS) | L=0.3mH | 151 | mJ | ||
| Electrical Characteristics | (TC = 25°C Unless Otherwise Noted) | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, IDS=-250µA | -30 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS= -30V, VGS=0V | -1 | µA | ||
| Zero Gate Voltage Drain Current (IDSS) | TJ=55°C | -5 | µA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, IDS=-250µA | -1.0 | -3.0 | V | |
| Gate Leakage Current (IGSS) | VGS=±20V, VDS=0V | ±100 | nA | ||
| Diode Forward Voltage (VSD) | ISD=-1 A, VGS=0V | -0.7 | -1.0 | V | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=-10V, IDS=-12A | 11.5 | 15.0 | mΩ | |
| Drain-Source On-state Resistance (RDS(ON)) | VGS=-4.5V, IDS=-7A | 16.5 | 20.5 | mΩ | |
| Dynamic Characteristics | (TC = 25°C Unless Otherwise Noted) | ||||
| Gate Resistance (RG) | VGS=0V,VDS=0V,F=1MHz | 2.0 | Ω | ||
| Input Capacitance (Ciss) | VGS=0V, VDS=-15V, Frequency=1.0MHz | 2400 | pF | ||
| Output Capacitance (Coss) | VGS=0V, VDS=-15V, Frequency=1.0MHz | 370 | pF | ||
| Reverse Transfer Capacitance (Crss) | VGS=0V, VDS=-15V, Frequency=1.0MHz | 295 | pF | ||
| Turn-on Delay Time (td(ON)) | VDD= -15V, RG=1 Ω, IDS=-12A, VGS=-10V | 9 | ns | ||
| Turn-on Rise Time (Tr) | VDD= -15V, RG=1 Ω, IDS=-12A, VGS=-10V | 12 | ns | ||
| Turn-off Delay Time (td(OFF)) | VDD= -15V, RG=1 Ω, IDS=-12A, VGS=-10V | 24 | ns | ||
| Turn-off Fall Time (Tf) | VDD= -15V, RG=1 Ω, IDS=-12A, VGS=-10V | 12 | ns | ||
| Gate Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS=-24V, VGS=-10V, IDS=-12A | 34 | nC | ||
| Gate-Source Charge (Qgs) | VDS=-24V, VGS=-10V, IDS=-12A | 4 | nC | ||
| Gate-Drain Charge (Qgd) | VDS=-24V, VGS=-10V, IDS=-12A | 8.5 | nC |
2410121702_HUAYI-HY12P03S_C122493.pdf
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