Silicon Epitaxial Planar Digital Transistor Huixin MMDTA114YE PNP Type with Built in Bias Resistors and RoHS

Key Attributes
Model Number: MMDTA114YE
Product Custom Attributes
Input Resistor:
13kΩ
Resistor Ratio:
5.7
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
MMDTA114YE
Package:
SOT-523
Product Description

Product Overview

The MMDTA114YE is a PNP Silicon Epitaxial Planar Digital Transistor designed to simplify circuit design and reduce component count. It features built-in bias resistors, making it ideal for applications where space and manufacturing efficiency are critical. This transistor is Halogen and Antimony Free (HAF) and RoHS compliant.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon Epitaxial Planar
  • Color: Not specified
  • Certifications: Halogen and Antimony Free (HAF), RoHS compliant

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitNotes
Collector Base Voltage-VCBO50V
Collector Emitter Voltage-VCEO50V
Input VoltageVIN-40+6V
Collector Current-IC100mA
Total Power DissipationPtot150mW1)
Junction TemperatureTj150OC
Storage Temperature RangeTstg-55+150OC
Thermal Resistance Junction to AmbientRJA833/W1)
DC Current GainhFE68at -VCE = 5 V, -IC = 5 mA
Collector Base Cutoff Current-ICBO0.5Aat -VCB = 50 V
Emitter Base Cutoff Current-IEBO0.88mAat -VEB = 5 V
Collector Base Breakdown Voltage-V(BR)CBO50Vat -IC =10 A
Collector Emitter Breakdown Voltage-V(BR)CEO50Vat -IC = 1 mA
Collector Emitter Saturation Voltage-VCE(sat)0.3Vat -IC = 5 mA, -IB = 0.25 mA
Input off Voltage-VI(off)0.3Vat -VCE = 5 V, -IC = 100 A
Input on Voltage-VI(on)1.4Vat -VCE = 0.3 V, -IC = 1 mA
Transition FrequencyfT250MHzat -VCE = 10 V, IE = 5 mA, f = 100 MHz
Input ResistanceR171013K
Resistance RatioR2 / R13.74.75.7

2508211801_Huixin-MMDTA114YE_C49435593.pdf

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