Silicon Epitaxial Planar Digital Transistor Huixin MMDTA114YE PNP Type with Built in Bias Resistors and RoHS
Product Overview
The MMDTA114YE is a PNP Silicon Epitaxial Planar Digital Transistor designed to simplify circuit design and reduce component count. It features built-in bias resistors, making it ideal for applications where space and manufacturing efficiency are critical. This transistor is Halogen and Antimony Free (HAF) and RoHS compliant.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Color: Not specified
- Certifications: Halogen and Antimony Free (HAF), RoHS compliant
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Notes |
| Collector Base Voltage | -VCBO | 50 | V | |||
| Collector Emitter Voltage | -VCEO | 50 | V | |||
| Input Voltage | VIN | -40 | +6 | V | ||
| Collector Current | -IC | 100 | mA | |||
| Total Power Dissipation | Ptot | 150 | mW | 1) | ||
| Junction Temperature | Tj | 150 | OC | |||
| Storage Temperature Range | Tstg | -55 | +150 | OC | ||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | 1) | ||
| DC Current Gain | hFE | 68 | at -VCE = 5 V, -IC = 5 mA | |||
| Collector Base Cutoff Current | -ICBO | 0.5 | A | at -VCB = 50 V | ||
| Emitter Base Cutoff Current | -IEBO | 0.88 | mA | at -VEB = 5 V | ||
| Collector Base Breakdown Voltage | -V(BR)CBO | 50 | V | at -IC =10 A | ||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 50 | V | at -IC = 1 mA | ||
| Collector Emitter Saturation Voltage | -VCE(sat) | 0.3 | V | at -IC = 5 mA, -IB = 0.25 mA | ||
| Input off Voltage | -VI(off) | 0.3 | V | at -VCE = 5 V, -IC = 100 A | ||
| Input on Voltage | -VI(on) | 1.4 | V | at -VCE = 0.3 V, -IC = 1 mA | ||
| Transition Frequency | fT | 250 | MHz | at -VCE = 10 V, IE = 5 mA, f = 100 MHz | ||
| Input Resistance | R1 | 7 | 10 | 13 | K | |
| Resistance Ratio | R2 / R1 | 3.7 | 4.7 | 5.7 |
2508211801_Huixin-MMDTA114YE_C49435593.pdf
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