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quality performance tuning diode Infineon BBY6502VH6327XTSA1 for low frequency control elements in mobile communication devices factory
quality performance tuning diode Infineon BBY6502VH6327XTSA1 for low frequency control elements in mobile communication devices factory

performance tuning diode Infineon BBY6502VH6327XTSA1 for low frequency control elements in mobile communication devices

Key Attributes
Model Number: BBY6502VH6327XTSA1
Product Custom Attributes
Capacitance Ratio:
10.9@C0.3V/C4.7V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
15V
Diode Capacitance:
2.8pF@4.7V,1MHz
Mfr. Part #:
BBY6502VH6327XTSA1
Package:
SC-79
Product Description

Product Overview

The BBY65-02V is a high Q hyperabrupt silicon tuning diode designed for low tuning voltage operation in mobile communications equipment. It is ideal for low frequency control elements such as TCXOS and VCXOS, offering a high capacitance ratio and good C-V linearity. This Pb-free (RoHS compliant) package component ensures reliable performance across a wide operating temperature range.

Product Attributes

  • Brand: Infineon Technologies
  • Package Type: SC79
  • Compliance: Pb-free (RoHS compliant)

Technical Specifications

Parameter Symbol Value Unit Notes
Type BBY65-02V
Package SC79
Configuration single
Inductance (LS) LS 0.6 nH
Marking F
Maximum Ratings at TA = 25C, unless otherwise specified
Diode reverse voltage VR 15 V
Forward current IF 50 mA
Operating temperature range Top -55 ... 150 C
Storage temperature Tstg -55 ... 150 C
Electrical Characteristics at TA = 25C, unless otherwise specified
DC Characteristics
Reverse current (VR = 10 V) IR - nA min.
Reverse current (VR = 10 V, TA = 85 C) IR - nA typ.
Reverse current (VR = 10 V, TA = 85 C) IR 100 nA max.
AC Characteristics
Diode capacitance (VR = 0.3 V, f = 1 MHz) CT 28.2 pF min.
Diode capacitance (VR = 0.3 V, f = 1 MHz) CT 29.5 pF typ.
Diode capacitance (VR = 0.3 V, f = 1 MHz) CT 30.8 pF max.
Diode capacitance (VR = 1 V, f = 1 MHz) CT 20.25 pF typ.
Diode capacitance (VR = 2 V, f = 1 MHz) CT 9.8 pF typ.
Diode capacitance (VR = 3 V, f = 1 MHz) CT 4.45 pF typ.
Diode capacitance (VR = 4.7 V, f = 1 MHz) CT 2.7 pF typ.
Diode capacitance (VR = 4.7 V, f = 1 MHz) CT 2.8 pF max.
Capacitance ratio (VR = 0.3 V, VR = 4.7 V) CT0.3/ CT4.7 10 - min.
Capacitance ratio (VR = 0.3 V, VR = 4.7 V) CT0.3/ CT4.7 10.9 - typ.
Capacitance ratio (VR = 1 V, VR = 3 V) CT1/CT3 4.55 - typ.
Series resistance (VR = 1 V, f = 470 MHz) rS 0.6 typ.
Series resistance (VR = 1 V, f = 470 MHz) rS 0.9 max.

2410121849_Infineon-BBY6502VH6327XTSA1_C5311591.pdf

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