Switching MOSFET HUAYI HY4004P N Channel Enhancement Mode with 40V 208A and Low On State Resistance
Key Attributes
Model Number:
HY4004P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
208A
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
596pF
Number:
1 N-channel
Output Capacitance(Coss):
1.465nF
Input Capacitance(Ciss):
5.712nF
Pd - Power Dissipation:
217W
Gate Charge(Qg):
158nC@10V
Mfr. Part #:
HY4004P
Package:
TO-220FB
Product Description
Product Overview
The HY4004P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a reliable and rugged performance with key features like 40V/208A capability and low on-state resistance (RDS(ON) = 2.5 m typ. @ VGS=10V). Available in Lead-Free and Green (RoHS Compliant) options, it undergoes 100% avalanche testing.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green (Halogen Free)
- Package Options: TO-263-2L, TO-220FB-3L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Common Ratings | VDSS | TC=25C Unless Otherwise Noted | - | - | 40 | V |
| VGSS | - | - | 20 | V | ||
| TJ | - | - | 175 | C | ||
| TSTG | - | -55 | - | 175 | C | |
| IS | TC=25C, Mounted on Large Heat Sink | - | - | 208 | A | |
| Continuous Drain Current | ID | TC=25C | - | - | 208 | A |
| ID | TC=100C | - | - | 138 | A | |
| IDM | TC=25C | - | - | 30 | A | |
| Maximum Power Dissipation | PD | TC=25C | - | - | 217 | W |
| PD | TC=100C | - | - | 108 | W | |
| Thermal Resistance | RJC | - | - | 0.69 | C/W | |
| RJA | - | - | 62.5 | C/W | ||
| Static Characteristics | BVDSS | VGS=0V, IDS=250A | 40 | - | - | V |
| IDSS | VDS=40V, VGS=0V, TJ=85C | - | - | 10 | A | |
| VGS(th) | VDS=VGS, IDS=250A | 2.0 | 3.0 | 4.0 | V | |
| IGSS | VGS=20V, VDS=0V | - | - | 100 | nA | |
| RDS(ON) | VGS=10V, IDS=104A | - | 2.5 | - | m | |
| Diode Characteristics | VSD | ISD=104A, VGS=0V | - | 0.8 | 1.2 | V |
| trr | ISD=104A, dlSD/dt=100A/s | - | 37 | - | ns | |
| Qrr | ISD=104A, dlSD/dt=100A/s | - | 60 | - | nC | |
| Dynamic Characteristics | RG | VGS=0V,VDS=0V,F=1MHz | - | 1.0 | - | |
| Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 5712 | - | pF | |
| Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 1465 | - | pF | |
| Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 596 | - | pF | |
| Switching Characteristics | td(ON) | VDD=20V, RG=6 , IDS =104A, VGS=10V | - | 35 | - | ns |
| Tr | VDD=20V, RG=6 , IDS =104A, VGS=10V | - | 62 | - | ns | |
| td(OFF) | VDD=20V, RG=6 , IDS =104A, VGS=10V | - | 45 | - | ns | |
| Tf | VDD=20V, RG=6 , IDS =104A, VGS=10V | - | 30 | - | ns | |
| Gate Charge Characteristics | Qg | VDS=32V, VGS=10V, IDS=104A | - | 158 | - | nC |
| Qgs | VDS=32V, VGS=10V, IDS=104A | - | - | - | nC | |
| Qgd | VDS=32V, VGS=10V, IDS=104A | - | 66 | - | nC |
2411220136_HUAYI-HY4004P_C358125.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
