N Channel Enhancement Mode MOSFET HUAYI HY1803C2 with 2.4 Milliohm On Resistance and 80A Drain Current
Key Attributes
Model Number:
HY1803C2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
322pF
Number:
1 N-channel
Output Capacitance(Coss):
469pF
Input Capacitance(Ciss):
4.726nF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
HY1803C2
Package:
PPAK-8L(5x6)
Product Description
Product Overview
The HY1803C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance switching applications. It features a low on-resistance (RDS(ON)) of 2.4m at VGS = 10V and 2.8m at VGS = 4.5V, along with a high continuous drain current capability of 80A. This device is 100% avalanche tested, offering reliability and robustness for demanding power management tasks.
Product Attributes
- Brand: HYMEXA (HUAYI)
- Origin: China
- Material: Halogen-Free Devices Available (Compliant with RoHS)
- Certifications: Compliant with RoHS, meets or exceeds lead-free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | A |
| Drain-to-Source Leakage Current (TJ=55C) | IDSS | VDS=30V,VGS=0V | - | - | 5 | A |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 1 | 1.4 | 3 | V |
| Gate-Source Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 2.4 | 3.0 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 2.8 | 3.5 | m |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | 0.8 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/s | - | 23 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=20A,dISD/dt=100A/s | - | 58 | - | nC |
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 1.9 | - | |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 4726 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 469 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 322 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=20V,RG=3.3, IDS=20A,VGS=10V | - | 13 | - | ns |
| Turn-on Rise Time | Tr | VDD=20V,RG=3.3, IDS=20A,VGS=10V | - | 11 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD=20V,RG=3.3, IDS=20A,VGS=10V | - | 41 | - | ns |
| Turn-off Fall Time | Tf | VDD=20V,RG=3.3, IDS=20A,VGS=10V | - | 14 | - | ns |
| Total Gate Charge | Qg | VDS =24V, VGS=10V, ID=20A | - | 120 | - | nC |
| Gate-Source Charge | Qgs | VDS =24V, VGS=10V, ID=20A | - | 9 | - | nC |
| Gate-Drain Charge | Qgd | VDS =24V, VGS=10V, ID=20A | - | 26 | - | nC |
| Drain-Source Voltage | VDSS | - | - | 30 | - | V |
| Gate-Source Voltage | VGSS | - | - | 20 | - | V |
| Maximum Junction Temperature | TJ | - | - | 150 | - | C |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Source Current-Continuous (Body Diode) | IS | Tc=25C, Mounted on Large Heat Sink | - | 80 | - | A |
| Pulsed Drain Current | IDM | Tc=25C | - | 320 | - | A |
| Continuous Drain Current | ID | Tc=25C | - | 80 | - | A |
| Continuous Drain Current | ID | Tc=100C | - | 51 | - | A |
| Maximum Power Dissipation | PD | Tc=25C | - | 52 | - | W |
| Maximum Power Dissipation | PD | Tc=100C | - | 21 | - | W |
| Thermal Resistance, Junction-to-Case | RTJC | - | - | 2.4 | - | C/W |
| Thermal Resistance, Junction-to-Ambient | RTJA | Surface mounted on FR-4 board | - | 62 | - | C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.1mH, Starting TJ=25C, VGS =10V | - | 287.4 | - | mJ |
2411220408_HUAYI-HY1803C2_C358112.pdf
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