High Q silicon tuning diode Infineon BBY5702VH6327XTSA1 for VCXOs and mobile communication equipment
Key Attributes
Model Number:
BBY5702VH6327XTSA1
Product Custom Attributes
Capacitance Ratio:
4.5@C1V/C4V
Diode Configuration:
Independent
DC Reverse Voltage(Vr):
10V
Diode Capacitance:
5.5pF@4V,1MHz
Mfr. Part #:
BBY5702VH6327XTSA1
Package:
SC-79-2
Product Description
Product Overview
The BBY57 series is a high-performance silicon tuning diode designed for low tuning voltage operation in VCOs for mobile communication equipment and control elements like TCXOs and VCXOs. These diodes offer excellent linearity, high Q, low series resistance, and a high capacitance ratio. They are Pb-free and qualified according to AEC Q101 standards.
Product Attributes
- Brand: Infineon Technologies
- Material: Silicon
- Compliance: Pb-free (RoHS compliant)
- Qualification: AEC Q101
Technical Specifications
| Model | Type | Package | Configuration | LS (nH) | Marking |
|---|---|---|---|---|---|
| BBY57-02L | Silicon Tuning Diode | TSLP-2 | single | 0.4 | 55 |
| BBY57-02V | Silicon Tuning Diode | SC79 | single | 0.6 | 5 |
| BBY57-02W | Silicon Tuning Diode | SCD80 | single | 0.6 | 55 |
| BBY57-05W | Silicon Tuning Diode | SOT323 | common cathode | 1.4 | D5s |
| Parameter | Symbol | Value | Unit | Notes | |
|---|---|---|---|---|---|
| Diode reverse voltage | VR | 10 | V | Maximum Rating at TA = 25C | |
| Forward current | IF | 20 | mA | Maximum Rating at TA = 25C | |
| Operating temperature range | Top | -55 ... 125 | C | Maximum Rating | |
| Storage temperature | Tstg | -55 ... 150 | C | Maximum Rating | |
| Reverse current (VR = 8 V) | IR | - | 10 | nA | TA = 25C |
| Reverse current (VR = 8 V, TA = 85 C) | IR | - | 100 | nA | |
| Diode capacitance (VR = 1 V, f = 1 MHz) | CT | 16.5 - 18.6 | pF | ||
| Diode capacitance (VR = 2.5 V, f = 1 MHz) | CT | 9.35 - | pF | ||
| Diode capacitance (VR = 3 V, f = 1 MHz) | CT | 7 - 5.5 | pF | ||
| Diode capacitance (VR = 4 V, f = 1 MHz) | CT | 4.7 - | pF | ||
| Capacitance ratio (VR = 1 V, VR = 3 V, f = 1 MHz) | CT1/CT3 | 2.45 | - | typ. | |
| Capacitance ratio (VR = 1 V, VR = 4 V, f = 1 MHz) | CT1/CT4 | 3 - 4.5 | - | ||
| Series resistance (VR = 1 V, f = 470 MHz, BBY57-02L) | rS | 0.35 | typ. | ||
| Series resistance (VR = 1 V, f = 470 MHz, all others) | rS | 0.3 | typ. |
2411111119_Infineon-BBY5702VH6327XTSA1_C3272464.pdf
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