N Channel Power MOSFET Huixin H14N10FBL for Power Switching Hard Switched Circuits and UPS Applications
Key Attributes
Model Number:
H14N10FBL
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
13.8A
RDS(on):
75mΩ@10V;97mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.3pF
Number:
2 N-Channel
Input Capacitance(Ciss):
430pF
Pd - Power Dissipation:
35W
Output Capacitance(Coss):
32pF
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
H14N10FBL
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The H14N10FBL is an N-Channel Power MOSFET designed for high power and current handling capabilities. It is suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. This lead-free product is compliant with EU RoHS 2.0 and manufactured using a green molding compound as per IEC 61249 standard.
Product Attributes
- Brand: 6GMK
- Package: PDFN5*6-8L
- Certifications: Lead Free, EU RoHS 2.0, IEC 61249
- Material: Green molding compound
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 100 | V | |||
| VGSS | Gate-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | note5 TC = 25 | 13.8 | A | ||
| ID | Continuous Drain Current | note5 TC = 100 | 9.5 | A | ||
| IDM | Pulsed Drain Current | note3 | 52 | A | ||
| PD | Power Dissipation | note2 TC = 25 | 35 | W | ||
| IAS | Avalanche Current | note3,6 | 4.6 | A | ||
| EAS | Single Pulse Avalanche Energy | note3,6 | 5.5 | mJ | ||
| RJC | Thermal Resistance, Junction to Case | 3.6 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient | note1,4 | 62.5 | /W | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Off Characteristic | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Drain-Source Leakage Current | VDS = 100V, VGS = 0V | - | - | 1 | A |
| IGSS | Gate to Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristic | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.4 | - | 2.4 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID =5A | - | 75 | 90 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 5A | - | 97 | 116 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 1.0MHz | - | 430 | - | pF |
| Coss | Output Capacitance | - | 32 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 2.3 | - | pF | |
| Switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS= 50V, ID =10A, VGS = 10V | - | 6 | - | nC |
| Qgs | Gate-Source Charge | - | 0.98 | - | ||
| Qgd | Gate-Drain(Miller) Charge | - | 1.2 | - | ||
| td(on) | Turn-On Delay Time | VDS = 50V, ID =10A, RG = 2, VGS=10V | - | 16 | - | ns |
| tr | Turn-On Rise Time | - | 3.1 | - | ||
| td(off) | Turn-Off Delay Time | - | 13 | - | ||
| tf | Turn-Off Fall Time | - | 2.2 | - | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | - | - | 13.8 | A | |
| VSD | Diode Forward Voltage | IS=10A . VGS = 0V | - | - | 1.0 | V |
| trr | Reverse Recovery Time | ISD=10A, dlSD/dt=100A/s | - | 42 | - | ns |
| Qrr | Reverse Recovery Charge | - | 61 | - | nC | |
2509051530_Huixin-H14N10FBL_C51883377.pdf
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