N Channel Enhancement Mode MOSFET HUAYI HY4004B Suitable for DC DC Converters and Power Management
Key Attributes
Model Number:
HY4004B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
208A
RDS(on):
3.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
596pF
Number:
1 N-channel
Output Capacitance(Coss):
1.465nF
Input Capacitance(Ciss):
5.712nF
Pd - Power Dissipation:
217W
Gate Charge(Qg):
158nC@10V
Mfr. Part #:
HY4004B
Package:
TO-263-2
Product Description
Product Overview
The HY4004P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) options. This device is 100% avalanche tested.
Product Attributes
- Brand: HY (Huayi Microelectronics)
- Origin: China
- Certifications: RoHS Compliant, Lead Free, Green Devices Available
- Material: Matte tin plate termination finish
Technical Specifications
| Part Number | Description | VDSS (V) | ID (A) @ TC=100C | RDS(ON) (m) @ VGS=10V | Package |
| HY4004P/B | N-Channel Enhancement Mode MOSFET | 40 | 138 | 2.5 (typ.) | TO-220FB-3L / TO-263-2L |
2411220136_HUAYI-HY4004B_C330369.pdf
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