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quality EasyPACK module with fast trench fieldstop 3 IGBT SiC diode and integrated NTC sensor Infineon DF80R12W2H3FB11 factory
quality EasyPACK module with fast trench fieldstop 3 IGBT SiC diode and integrated NTC sensor Infineon DF80R12W2H3FB11 factory
quality EasyPACK module with fast trench fieldstop 3 IGBT SiC diode and integrated NTC sensor Infineon DF80R12W2H3FB11 factory
quality EasyPACK module with fast trench fieldstop 3 IGBT SiC diode and integrated NTC sensor Infineon DF80R12W2H3FB11 factory

EasyPACK module with fast trench fieldstop 3 IGBT SiC diode and integrated NTC sensor Infineon DF80R12W2H3FB11

Key Attributes
Model Number: DF80R12W2H3FB11
Product Custom Attributes
Td(off):
250ns
Pd - Power Dissipation:
20mW
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.13nF
Input Capacitance(Cies):
2.35nF
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1.00mA
Gate Charge(Qg):
0.32uC
Operating Temperature:
-40℃~+150℃@(Tj)
Pulsed Current- Forward(Ifm):
450A
Switching Energy(Eoff):
800uJ
Turn-On Energy (Eon):
260uJ
Mfr. Part #:
DF80R12W2H3FB11
Package:
Through Hole,62.8x56.7mm
Product Description

EasyPACK Module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC

The EasyPACK module features a fast Trench/Fieldstop High-Speed 3 IGBT and a SiC Schottky diode, along with PressFIT technology and an integrated NTC temperature sensor. It is designed for applications such as solar power systems, offering advantages like low switching losses and a compact design. The module boasts a 3 kV AC 1min insulation rating and an Al2O3 substrate with low thermal resistance.

Product Attributes

  • Brand: Infineon
  • Module Label Code: DF80R12W2H3F_B11
  • Material: Al2O3 substrate

Technical Specifications

ComponentParameterValueUnitConditions
Bypass-Diode / Bypass-DiodeRepetitive peak reverse voltage (VRRM)1200VTvj = 25C
Maximum RMS forward current per chip (IFRMSM)50ATH = 60C
Maximum RMS current at rectifier output (IRMSM)60ATH = 60C
Surge forward current (IFSM)450 / 360Atp = 10 ms, Tvj = 25C / 150C
It - value (It)1000 / 650Astp = 10 ms, Tvj = 25C / 150C
Forward voltage (VF)0.95VTvj = 150C, IF = 30 A
Reverse current (IR)0.10mATvj = 150C, VR = 1200 V
Thermal resistance, junction to heatsink per diode (RthJH)1.60K/W
IGBT-Chopper / IGBT-ChopperCollector-emitter voltage (VCES)1200VTvj = 25C
Implemented collector current (ICN)40A
Continuous DC collector current (IC nom)20ATH = 100C, Tvj max = 175C
Repetitive peak collector current (ICRM)80AtP = 1 ms
Gate-emitter peak voltage (VGES)+/-20V
Collector-emitter saturation voltage (VCE sat)1.55 / 1.70 / 1.75 / 1.70VIC = 20 A, VGE = 15 V, Tvj = 25C / 125C / 150C
Gate threshold voltage (VGEth)5.00 / 5.80 / 6.50VIC = 1.00 mA, VCE = VGE, Tvj = 25C
Gate charge (QG)0.32CVGE = -15 V ... +15 V
Input capacitance (Cies)2.35nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Reverse transfer capacitance (Cres)0.13nFf = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V
Collector-emitter cut-off current (ICES)1.0mAVCE = 1200 V, VGE = 0 V, Tvj = 25C
Gate-emitter leakage current (IGES)100nAVCE = 0 V, VGE = 20 V, Tvj = 25C
Turn-on delay time (td on)0.025 / 0.025 / 0.028sIC = 20 A, VCE = 600 V, VGE = 15 V, RGon = 12 , Tvj = 25C / 125C / 150C
Rise time (tr)0.01 / 0.012 / 0.012sIC = 20 A, VCE = 600 V, VGE = 15 V, RGon = 12 , Tvj = 25C / 125C / 150C
Turn-off delay time (td off)0.25 / 0.32 / 0.35sIC = 20 A, VCE = 600 V, VGE = 15 V, RGoff = 12 , Tvj = 25C / 125C / 150C
Fall time (tf)0.016 / 0.023 / 0.025sIC = 20 A, VCE = 600 V, VGE = 15 V, RGoff = 12 , Tvj = 25C / 125C / 150C
Thermal resistance, junction to heatsink per IGBT (RthJH)1.10K/W
Diode-Chopper / Diode-ChopperRepetitive peak reverse voltage (VRRM)1200VTvj = 25C
Continuous DC forward current (IF)15A
Repetitive peak forward current (IFRM)30AtP = 1 ms
It - value (It)40.0AsVR = 0 V, tP = 10 ms, Tvj = 125C
Forward voltage (VF)1.45 / 1.75 / 1.85 / 1.75VIF = 15 A, VGE = 0 V, Tvj = 25C / 125C / 150C
Peak reverse recovery current (IRM)5.00AIF = 15 A, - diF/dt = 1800 A/s (Tvj=150C), VR = 600 V, Tvj = 25C / 125C / 150C
Recovered charge (Qr)0.15 / 0.25 / 0.25CIF = 15 A, - diF/dt = 1800 A/s (Tvj=150C), VR = 600 V, Tvj = 25C / 125C / 150C
Thermal resistance, junction to heatsink per diode (RthJH)1.57K/W
Module / ModuleIsolation test voltage (VISOL)3.0kVRMS, f = 50 Hz, t = 1 min.
Creepage distance terminal to heatsink11.5mm
Clearance terminal to heatsink10.0mm
Comperative tracking index (CTI)> 200min.
Stray inductance module (LsCE)20nH
Storage temperature (Tstg)-40 to 125C
Weight (G)36g

2411220157_Infineon-DF80R12W2H3FB11_C17271226.pdf

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