High Saturation Current N Channel Enhancement Mode Transistor Huixin MMBT7002 for Switching Circuits
Key Attributes
Model Number:
MMBT7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
RDS(on):
5Ω@10V;7Ω@5V
Gate Threshold Voltage (Vgs(th)):
1V;2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
225mW
Input Capacitance(Ciss):
50pF
Mfr. Part #:
MMBT7002
Package:
SOT-23
Product Description
Product Overview
The MMBT7002 is an N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON) and high saturation current capability. It is suitable for voltage-controlled small signal switching and high-speed switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | ||
| Gate-body Leakage | IGSS | VDS=0V, VGS=±20V | ±80 | nA | |
| Zero Gate Voltage Drain current | IDSS | VDS=60V, VGS=0V | 80 | nA | |
| On-state Drain current | ID(ON) | VGS=10V, VDS=7V | 500 | mA | |
| Gate-Threshold voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 2.5 | V |
| Forward Trans conductance | gfs | VDS=10V, ID=200mA | 80 | mS | |
| Drain-source on-voltage | VDS(ON) | VGS=10V, ID=500mA | 5 | Ω | |
| Drain-source on-voltage | VDS(ON) | VGS=5V, ID=50mA | 0.375 | V | |
| Diode Forward voltage | VSD | IS=115mA, VGS=0V | 0.55 | 1.20 | V |
| Input capacitance | Ciss | VDS=25V, VGS=0V,f=1MHz | 50 | pF | |
| Output capacitance | Coss | VDS=5V, ID=50mA | 25 | pF | |
| Reverse Transfer capacitance | Crss | VDS=5V, ID=50mA | 7 | pF | |
| Continuous Drain Current | ID | 115 | mA | ||
| Power Dissipation | PD | 225 | mW | ||
| Junction Temperature | Tj | 150 | ℃ | ||
| Storage Temperature | Tstg | -50 | +150 | ℃ | |
| Thermal Resistance From Junction to Ambient | RΘJA | 556 | ℃/W | ||
| Turn-on Time* | td(on) | VDD=25V, RL=50Ω, ID=500mA, VGEN=10V, RG=25Ω | 20 | ns | |
| Turn-off Time* | td(off) | VDD=25V, RL=50Ω, ID=500mA, VGEN=10V, RG=25Ω | 40 | ns |
2507301400_Huixin-MMBT7002_C49435597.pdf
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