High voltage 500V MOSFET Huixin H13N50F designed for switching power supplies and adapter applications
Key Attributes
Model Number:
H13N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
1.51nF
Output Capacitance(Coss):
170pF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
H13N50F
Package:
TO-220F
Product Description
Product Overview
The H13N50F is a 500V N-Channel MOSFET designed for high-efficiency switching applications. It features fast switching speeds, 100% avalanche testing, improved dv/dt capability, and enhanced avalanche ruggedness. This lead-free component is ideal for use in Switch Mode Power Supplies (SMPS), adapters, chargers, and AC-DC switching power supplies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead Free
Technical Specifications
| Part Number | Package | Continuous Drain Current (A) @ TC=25 | Continuous Drain Current (A) @ TC=100 | Drain-to-Source Voltage (V) | Gate-to-Source Voltage (V) | Power Dissipation (W) | RDS(on) () Typ | VGS(TH) (V) Typ |
| H13N50F | TO-220F | 13 | 9.5 | 500 | 30 | 40 | 0.38 | 2 |
| Parameter | Min. | Typ. | Max. | Units | Test Conditions |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 500 | -- | -- | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current (IDSS) @ 25 | -- | -- | 1 | A | VDS=500V,VGS=0V |
| Zero Gate Voltage Drain Current (IDSS) @ 100 | -- | -- | 100 | A | VDS=500V,VGS=0V |
| Gate to Source Forward Leakage (IGSS) | -- | -- | 100 | nA | VGS=30V ,VDS=0V |
| Gate to Source Reverse Leakage | -- | -- | -100 | nA | VGS=-30V ,VDS=0V |
| Static Drain- to- Source On- Resistance (RDS(on)) | -- | 0.38 | 0.48 | VGS=10V,ID=6.5A | |
| Input Capacitance (Ciss) | -- | 1510 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Output Capacitance (Coss) | -- | 170 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Reverse Transfer Capacitance (Crss) | -- | 18 | -- | pF | VGS=0V VDS=25V f=1MHz |
| Total Gate Charge (Qg) | -- | 45 | -- | nC | VDS=400V ID=13A VGS=10V |
| Gate- to- Source Charge (Qgs) | -- | 6 | -- | nC | VDS=400V ID=13A VGS=10V |
| Gate-to-Drain ("Miller") Charge (Qgd) | -- | 22 | -- | nC | VDS=400V ID=13A VGS=10V |
| Turn- on Delay Time (td(ON)) | -- | 13 | -- | nS | VDS=250V ID=13A VGS=10V |
| Rise Time (trise) | -- | 35 | -- | nS | VDS=250V ID=13A VGS=10V |
| Turn- OFF Delay Time (td(OFF)) | -- | 45 | -- | nS | VDS=250V ID=13A VGS=10V |
| Fall Time (tfall) | -- | 20 | -- | nS | VDS=250V ID=13A VGS=10V |
| Diode Forward Voltage (VSD) | -- | -- | 1.4 | V | IF=2A,VGS=0V |
| Reverse Recovery Time (trr) | -- | 380 | -- | nS | VGS=0V,IF=13A di/dt=100A/s |
| Reverse Recovery Charge (Qrr) | -- | 4 | -- | uC | VGS=0V,IF=13A di/dt=100A/s |
| Parameter | Typ | Max | Unit |
| Thermal Resistance Junction-Case (RJC) | -- | 3.2 | / W |
| Thermal Resistance Junction-Ambient (RJA) | -- | 62.5 | / W |
2508041620_Huixin-H13N50F_C49823497.pdf
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