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quality Highly insulated Infineon FZ250R65KE3 module with CTI greater than 600 and thermal cycling capability factory
quality Highly insulated Infineon FZ250R65KE3 module with CTI greater than 600 and thermal cycling capability factory

Highly insulated Infineon FZ250R65KE3 module with CTI greater than 600 and thermal cycling capability

Key Attributes
Model Number: FZ250R65KE3
Product Custom Attributes
Pd - Power Dissipation:
1000kW
Td(off):
7.3us
Td(on):
650ns
Collector-Emitter Breakdown Voltage (Vces):
6.5kV
Input Capacitance(Cies):
69nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.4V@35mA
Operating Temperature:
-50℃~+125℃
Switching Energy(Eoff):
1.2J
Turn-On Energy (Eon):
1.4J
Mfr. Part #:
FZ250R65KE3
Package:
Screw Terminals
Product Description

Product Overview

Highly insulated module featuring Trench/Fieldstop IGBT3 and emitter controlled 3 diodes. This module offers electrical advantages such as a VCES of 6500 V and a low VCE,sat. Mechanical features include extended storage temperature down to -55 C, high creepage and clearance distances, a package with CTI > 600, and enhanced insulation of 10.4 kV AC for 60 seconds. The AlSiC base plate enhances thermal cycling capability. Suitable for medium-voltage converters and traction drives, this product is qualified for industrial applications according to relevant IEC standards.

Product Attributes

  • Brand: Infineon
  • Product Name: FZ250R65KE3
  • Insulation: Enhanced insulation of 10.4 kV AC 60 s
  • Base Plate Material: AlSiC
  • CTI: > 600
  • Certifications: Qualified for industrial applications according to IEC 60747, 60749, and 60068

Technical Specifications

ParameterSymbolNote or test conditionValues UnitMin.Typ.Max.
Collector-emitter voltageVCESTvj = 25 C6500 V
Continuous DC collector currentICDCTvj max = 150 C, TC = 80 C250 A
Repetitive peak collector currentICRMtP = 1 ms500 A
Collector-emitter saturation voltageVCE satIC = 250 A, VGE = 15 V, Tvj = 25 C3.00 3.40 V
Gate threshold voltageVGEthIC = 35 mA, VCE = VGE, Tvj = 25 C5.40 6 6.60 V
Input capacitanceCiesf = 1000 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V69 nF
Turn-on delay time (inductive load)tdonIC = 250 A, VCE = 3600 V, VGE = 15 V, RGon = 3 , Tvj = 25 C0.640 s
Turn-off delay time (inductive load)tdoffIC = 250 A, VCE = 3600 V, VGE = 15 V, RGoff = 20 , Tvj = 25 C7.300 s
Turn-on energy loss per pulseEonIC = 250 A, VCE = 3600 V, L = 280 nH, VGE = 15 V, RGon = 3 , Tvj = 25 C1400 mJ
Turn-off energy loss per pulseEoffIC = 250 A, VCE = 3600 V, L = 280 nH, VGE = 15 V, RGoff = 20 , Tvj = 25 C1200 mJ
Thermal resistance, junction to caseRthJCper IGBT26.1 K/kW
Repetitive peak reverse voltageVRRMTvj = 25 C6500 V
Continuous DC forward currentIF250 A
Repetitive peak forward currentIFRMtP = 1 ms500 A
Forward voltageVFIF = 250 A, Tvj = 25 C3.00 3.50 V
Peak reverse recovery currentIRMVR = 3600 V, IF = 250 A, VGE = -15 V, -diF/dt = 1000 A/s (Tvj = 125 C), Tvj = 25 C370 A
Recovered chargeQrVR = 3600 V, IF = 250 A, VGE = -15 V, -diF/dt = 1000 A/s (Tvj = 125 C), Tvj = 25 C290 C
Reverse recovery energyErecVR = 3600 V, IF = 250 A, VGE = -15 V, -diF/dt = 1000 A/s (Tvj = 125 C), Tvj = 25 C470 mJ
Thermal resistance, junction to caseRthJCper diode56.0 K/kW
Storage temperatureTstg-55 125 C
Mounting torque for module mountingMM6, Screw4.25 5.75 Nm
Terminal connection torqueMM8, Screw8 10 Nm
WeightG500 g
Isolation test voltageVISOLRMS, f = 50 Hz, t = 60 s10.4 kV
Comparative tracking indexCTI>600

2504101957_Infineon-FZ250R65KE3_C17608651.pdf

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