600V IGBT Infineon IGP06N60T with low saturation voltage and short circuit withstand time of 5 seconds
Key Attributes
Model Number:
IGP06N60T
Product Custom Attributes
Pd - Power Dissipation:
88W
Td(off):
130ns
Td(on):
9ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
11pF
Input Capacitance(Cies):
368pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.18mA
Gate Charge(Qg):
42nC@15V
Output Capacitance(Coes):
28pF
Switching Energy(Eoff):
110uJ
Turn-On Energy (Eon):
90uJ
Mfr. Part #:
IGP06N60T
Package:
TO-220-3
Product Description
Product Overview
The IGP06N60T is a TRENCHSTOP Series Low Loss IGBT designed for 600V applications. It features very low VCE(sat) of 1.5V (typ.), a maximum junction temperature of 175C, and a short circuit withstand time of 5s. This IGBT utilizes TRENCHSTOP and Fieldstop technology, offering very tight parameter distribution, high ruggedness, and temperature-stable behavior. It also boasts low EMI and is qualified according to JEDEC standards for target applications. The product is Pb-free lead plating and RoHS compliant.
Product Attributes
- Brand: Infineon Technologies
- Series: TRENCHSTOP
- Technology: TRENCHSTOP and Fieldstop
- Certifications: JEDEC, RoHS compliant
- Lead Plating: Pb-free
Technical Specifications
| Type | VCE (V) | IC; Tc=100C (A) | VCE(sat),Tj=25C (V) | Tj,max (C) | Marking | Package |
| IGP06N60T | 600 | 6 | 1.5 | 175 | G06T60 | PG-TO220-3 |
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-emitter breakdown voltage | V(BR)CES | VGE=0V, IC=0.25mA | 600 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=6A, Tj=25C | 1.5 | V |
| Collector-emitter saturation voltage | VCE(sat) | VGE = 15V, IC=6A, Tj=175C | 1.8 | V |
| Gate-emitter threshold voltage | VGE(th) | IC=0.18mA, VCE=VGE | 4.1 - 5.7 | V |
| Zero gate voltage collector current | ICE S | VCE=600V, VGE=0V, Tj=25C | - 40 | A |
| Zero gate voltage collector current | ICE S | VCE=600V, VGE=0V, Tj=175C | - 700 | A |
| Gate-emitter leakage current | IGE S | VCE=0V,VGE=20V | - 100 | nA |
| Transconductance | gfs | VCE=20V, IC=6A | - 3.6 | S |
| Input capacitance | Ciss | VCE=25V, VGE=0V, f=1MHz | - 368 | pF |
| Output capacitance | Coss | VCE=25V, VGE=0V, f=1MHz | - 28 | pF |
| Reverse transfer capacitance | Crss | VCE=25V, VGE=0V, f=1MHz | - 11 | pF |
| Gate charge | QGat e | VCC=480V, IC=6A, VGE=15V | - 42 | nC |
| Internal emitter inductance | LE | measured 5mm from case | - 7 | nH |
| Short circuit collector current | IC(SC) | VGE=15V, tSC 5s, VCC = 400V, Tj = 25C | - 55 | A |
| Parameter | Symbol | Conditions | Value (Tj=25C) | Value (Tj=175C) | Unit |
| Turn-on delay time | td(on) | VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF | 9 | 9 | ns |
| Rise time | tr | VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF | 6 | 8 | ns |
| Turn-off delay time | td(off) | VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF | 130 | 165 | ns |
| Fall time | tf | VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF | 58 | 84 | ns |
| Turn-on energy | Eon | VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF | 0.09 | 0.14 | mJ |
| Turn-off energy | Eoff | VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF | 0.11 | 0.18 | mJ |
| Total switching energy | Ets | VCC=400V, IC=6A, VGE=0/15V, rG=23, L=60nH, C=40pF | 0.2 | 0.335 | mJ |
2410121815_Infineon-IGP06N60T_C536072.pdf
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