Battery Protection P Channel MOSFET HXY MOSFET AOD403 HXY with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
AOD403-HXY
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+175℃
RDS(on):
10mΩ@10V,70A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
140pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.45nF@25V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
AOD403-HXY
Package:
TO-252-2L
Product Description
Product Overview
The AOD403-HXY is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Model: AOD403-HXY
- Package: TO-252-2L (TO-252-2(DPAK))
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | VGS=0V , ID=-250uA | -30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-20A | --- | 7 | 10 | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-15A | --- | 11 | 18 | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | --- | --- | -1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | --- | --- | -5 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | |
| Qg | Total Gate Charge (-10V) | VDS=-15V , VGS=-10V ID=-18A | --- | 60 | --- | nC |
| Qgs | Gate-Source Charge | --- | 9 | --- | ||
| Qgd | Gate-Drain Charge | --- | 15 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=-15V VGS=-10V RG=3.3, ID=-20A | --- | 17 | --- | ns |
| Tr | Rise Time | --- | 40 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 55 | --- | ||
| Tf | Fall Time | --- | 13 | --- | ||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | --- | 3450 | --- | pF |
| Coss | Output Capacitance | --- | 255 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 140 | --- | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | -70 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | --- | 22 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 72 | --- | nC |
2509181601_HXY-MOSFET-AOD403-HXY_C4748761.pdf
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