EconoPIM2 power module featuring Infineon FP100R12N2T7BPSA2 with TRENCHSTOP IGBT7 and NTC temperature sensor
Key Attributes
Model Number:
FP100R12N2T7BPSA2
Product Custom Attributes
Td(off):
324ns
Pd - Power Dissipation:
20mW
Td(on):
171ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.076nF
Input Capacitance(Cies):
21.7nF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.5V@15V,100A
Gate Charge(Qg):
1.8uC@600V,15V
Operating Temperature:
-40℃~+175℃@(Tj)
Pulsed Current- Forward(Ifm):
200A
Switching Energy(Eoff):
6.42mJ
Turn-On Energy (Eon):
10.4mJ
Mfr. Part #:
FP100R12N2T7BPSA2
Package:
Through Hole,107.5x45mm
Product Description
Product Overview
The FP100R12N2T7 EconoPIM2 module integrates TRENCHSTOP IGBT7 and Emitter Controlled 7 diode technology. It offers electrical features such as a VCES of 1200 V, IC nom of 100 A / ICRM of 200 A, low VCEsat, and overload operation up to 175C. Mechanically, it features an Al2O3 substrate with low thermal resistance, a copper base plate, an integrated NTC temperature sensor, and solder contact technology. This module is qualified for industrial applications according to IEC standards.
Product Attributes
- Brand: Infineon
- Product Line: EconoPIM2
- Technology: TRENCHSTOP IGBT7, Emitter Controlled 7 diode
- Substrate Material: Al2O3
- Base Plate Material: Copper
- Certifications: Qualified for industrial applications according to IEC 60747, 60749 and 60068
- Integrated Sensor: NTC temperature sensor
Technical Specifications
| Component | Parameter | Symbol | Note or test condition | Values | Unit |
| General Module | Isolation test voltage | VISOL | RMS, f = 50 Hz, t = 1 min | 2.5 | kV |
| Material of module baseplate | - | - | Cu | - | |
| Internal Isolation | - | - | basic insulation (class 1, IEC 61140) | - | |
| Substrate Material | - | - | Al2O3 | - | |
| Creepage distance | dCreep | terminal to heatsink | 10.0 | mm | |
| Clearance | dClear | terminal to heatsink | 7.5 | mm | |
| Comparative tracking index | CTI | - | > 200 | - | |
| Stray inductance module | LsCE | - | 35 | nH | |
| Module lead resistance, terminals - chip | RAA'+CC' | TC=25C, per switch | 2.5 | m | |
| Module lead resistance, terminals - chip | RCC'+EE' | TC=25C, per switch | 4.3 | m | |
| Storage temperature | Tstg | - | -40 to 125 | C | |
| Weight | G | - | 180 | g | |
| IGBT, Inverter | Collector-emitter voltage | VCES | Tvj = 25 C | 1200 | V |
| Continous DC collector current | ICDC | Tvj max = 175 C, TC = 95 C | 100 | A | |
| Repetitive peak collector current | ICRM | tP = 1 ms | 200 | A | |
| Gate-emitter peak voltage | VGES | - | 20 | V | |
| Collector-emitter saturation voltage | VCE sat | IC = 100 A, VGE = 15 V | 1.50 (Tvj=25C), 1.64 (Tvj=125C), 1.72 (Tvj=175C) | V | |
| Gate threshold voltage | VGEth | IC = 2.5 mA, VCE = VGE, Tvj = 25 C | 5.15 to 6.45 | V | |
| Gate charge | QG | VGE = 15 V, VCE = 600 V | 1.8 | C | |
| Input capacitance | Cies | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 21.7 | nF | |
| Reverse transfer capacitance | Cres | f = 100 kHz, Tvj = 25 C, VCE = 25 V, VGE = 0 V | 0.076 | nF | |
| Turn-on delay time | tdon | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.171 to 0.190 | s | |
| Rise time | tr | IC = 100 A, VCE = 600 V, VGE = 15 V, RGon = 4.3 | 0.050 to 0.058 | s | |
| Turn-off delay time | tdoff | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.324 to 0.494 | s | |
| Fall time | tf | IC = 100 A, VCE = 600 V, VGE = 15 V, RGoff = 4.3 | 0.093 to 0.245 | s | |
| Turn-on energy loss per pulse | Eon | IC = 100 A, VCE = 600 V, L = 35 nH, VGE = 15 V, RGon = 4.3 | 10.4 to 17.6 | mJ | |
| Diode, Inverter | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1200 | V |
| Continous DC forward current | IF | - | 100 | A | |
| Repetitive peak forward current | IFRM | tP = 1 ms | 200 | A | |
| I2t - value | I2t | tP = 10 ms, VR = 0 V | 930 to 1000 | As | |
| Forward voltage | VF | IF = 100 A | 1.52 to 1.72 | V | |
| Peak reverse recovery current | IRM | VR = 600 V, IF = 100 A, VGE = -15 V | 58.2 to 82.4 | A | |
| Recovered charge | Qr | VR = 600 V, IF = 100 A, VGE = -15 V | 9.83 to 20.1 | C | |
| Reverse recovery energy | Erec | VR = 600 V, IF = 100 A, VGE = -15 V | 3.31 to 6.45 | mJ | |
| Diode, Rectifier | Repetitive peak reverse voltage | VRRM | Tvj = 25 C | 1600 | V |
| Maximum RMS forward current per chip | IFRMSM | TC = 110 C | 100 | A | |
| Maximum RMS current at rectifier output | IRMSM | TC = 110 C | 100 | A | |
| Surge forward current | IFSM | tP = 10 ms | 515 to 745 | A | |
| I2t - value | I2t | tP = 10 ms | 1330 to 2780 | As | |
| Forward voltage | VF | IF = 100 A, Tvj = 150 C | 1.16 | V | |
| NTC-Thermistor | Temperature under switching conditions | Tvj op | - | -40 to 175 | C |
| Temperature under switching conditions | Tvj op | - | -40 to 175 | C |
2411041709_Infineon-FP100R12N2T7BPSA2_C17461901.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
