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quality Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode factory
quality Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode factory

Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode

Key Attributes
Model Number: IKW50N65EH5
Product Custom Attributes
Td(off):
172ns
Pd - Power Dissipation:
275W
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
12pF
Input Capacitance(Cies):
3nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
3.2V@0.5mA
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
200A
Output Capacitance(Coes):
90pF
Reverse Recovery Time(trr):
81ns
Switching Energy(Eoff):
500uJ
Turn-On Energy (Eon):
1.5mJ
Mfr. Part #:
IKW50N65EH5
Package:
TO-247-3
Product Description

Product Overview

The IKW50N65EH5 is a high-speed fifth-generation IGBT from Infineon, utilizing TRENCHSTOPTM 5 technology. It offers best-in-class efficiency in hard switching and resonant topologies and serves as a plug-and-play replacement for previous IGBT generations. This device features a 650V breakdown voltage, low gate charge, and is copacked with a full-rated RAPID 1 fast and soft antiparallel diode. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. Applications include uninterruptible power supplies, solar converters, welding converters, and mid to high-range switching frequency converters.

Product Attributes

  • Brand: Infineon
  • Technology: TRENCHSTOPTM 5
  • Diode: RAPID 1 fast and soft antiparallel diode
  • Certifications: RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

TypeVCEICVCEsat, Tvj=25CTvjmaxMarkingPackage
IKW50N65EH5650V50A1.65V175CK50EEH5PG-TO247-3
ParameterSymbolConditionsValueUnit
Collector-emitter breakdown voltageV(BR)CESVGE = 0V, IC = 0.20mA650V
Collector-emitter saturation voltageVCEsatVGE = 15.0V, IC = 50.0A, Tvj = 25C1.65V
Diode forward voltageVFVGE = 0V, IF = 50.0A, Tvj = 25C1.35V
Gate-emitter threshold voltageVGE(th)IC = 0.50mA, VCE = VGE3.2 - 4.8V
Zero gate voltage collector currentICESVCE = 650V, VGE = 0V, Tvj = 25C1A
Gate-emitter leakage currentIGESVCE = 0V, VGE = 20V100nA
TransconductancegfsVCE = 20V, IC = 50.0A62.0S
Input capacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz3000pF
Output capacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz90pF
Reverse transfer capacitanceCresVCE = 25V, VGE = 0V, f = 1MHz12pF
Gate chargeQGVCC = 520V, IC = 50.0A, VGE = 15V120.0nC
Internal emitter inductanceLEmeasured 5mm from case13.0nH
IGBT thermal resistance, junction - caseRth(j-C)IGBT0.55K/W
Diode thermal resistance, junction - caseRth(j-C)Diode0.63K/W
Thermal resistance junction - ambientRth(j-a)-40K/W
ParameterSymbolConditionsValueUnit
Turn-on delay timetd(on)Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.025ns
Rise timetrTvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.029ns
Turn-off delay timetd(off)Tvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0172ns
Fall timetfTvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.035ns
Turn-on energyEonTvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.01.50mJ
Turn-off energyEoffTvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.00.50mJ
Total switching energyEtsTvj = 25C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.02.00mJ
Diode reverse recovery timetrrTvj = 25C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s81ns
Diode reverse recovery chargeQrrTvj = 25C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s1.10C
Diode peak reverse recovery currentIrrmTvj = 25C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s17.0A
Turn-on delay timetd(on)Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.024ns
Rise timetrTvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.030ns
Turn-off delay timetd(off)Tvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.0190ns
Fall timetfTvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.030ns
Turn-on energyEonTvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.02.00mJ
Turn-off energyEoffTvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.00.60mJ
Total switching energyEtsTvj = 150C, VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, RG = 12.02.60mJ
Diode reverse recovery timetrrTvj = 150C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s108ns
Diode reverse recovery chargeQrrTvj = 150C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s2.60C
Diode peak reverse recovery currentIrrmTvj = 150C, VR = 400V, IF = 50.0A, diF/dt = 1000A/s36.0A

2410121815_Infineon-IKW50N65EH5_C536218.pdf

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