Battery Protection Load Switching and Power Management with Huixin BC2301 P Channel Power MOSFET
Key Attributes
Model Number:
BC2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
RDS(on):
78mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
700mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
1 P-Channel
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
325pF
Output Capacitance(Coss):
63pF
Gate Charge(Qg):
3.2nC@4.5V
Mfr. Part #:
BC2301
Package:
SOT-23
Product Description
Product Overview
The BC2301 is a P-Channel Enhancement Mode Power MOSFET designed for surface mount applications. It offers high power and current handling capabilities, making it suitable for battery protection, load switching, and power management in various electronic devices. This product is halogen-free.
Product Attributes
- Package: SOT-23
- Certifications: Halogen free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | -VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | -ID | 2.8 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 10 | A | ||
| Maximum Power Dissipation | PD | 0.7 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 179 | °C/W | ||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±8V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250μA | 0.4 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-2.8A | -- | 78 | 110 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-2.5V,ID=-2A | -- | 102 | 140 | mΩ |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-2.8A | -- | 2 | -- | S |
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 325 | -- | pF |
| Output Capacitance | Coss | -- | 63 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 37 | -- | pF | |
| Turn-on Delay Time | td(on) | VDD=-10V, RL=5Ω, VGS=-4.5V,RGEN=3Ω | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 5.5 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 22 | -- | nS | |
| Turn-off Fall Time | tf | -- | 8 | -- | nS | |
| Total Gate Charge | Qg | VDS=-10V,ID=-2A, VGS=-4.5V | -- | 3.2 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.6 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 0.9 | -- | nC | |
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-2.8A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 2.8 | A |
2509051530_Huixin-BC2301_C51883375.pdf
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