Switching Huixin H40N25 N Channel Power MOSFET with Low Gate Charge and High Power Dissipation Rating
Key Attributes
Model Number:
H40N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
55A
RDS(on):
56mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.35nF
Pd - Power Dissipation:
300W
Output Capacitance(Coss):
463pF
Gate Charge(Qg):
63.6nC@10V
Mfr. Part #:
H40N25
Package:
TO-220AB
Product Description
Product Overview
The H40N25 is an N-Channel Power MOSFET featuring advanced high cell density Trench technology, super low gate charge, and excellent Cdv/dt effect decline. It is designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch applications. This green device offers efficient performance with reduced switching losses.
Product Attributes
- Brand: 6GMK
- Model: H40N25
- Package: TO-220AB
- Certifications: UL
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
| VDSS | Drain-to-Source Voltage | 250 | V | |
| ID | Continuous Drain Current | TC = 25 C | 55 | A |
| ID | Continuous Drain Current | TC = 100 C | 35 | A |
| IDM | Pulsed Drain Current | TC = 25 C | 220 | A |
| VGS | Gate-to-Source Voltage | 30 | V | |
| EAS | Single Pulse Avalanche Energy | 2000 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | TC = 25 C | 300 | W |
| TJTstg | Operating Junction and Storage Temperature Range | 55 to 175 | ||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 250 | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA,Reference25 | 0.30 | V/ |
| IDSS | Drain to Source Leakage Current | VDS =250V, VGS= 0V, TJ = 25 | 1 | A |
| IDSS | Drain to Source Leakage Current | VDS =200V, VGS= 0V, TJ = 125 | 100 | A |
| IGSS(F) | Gate to Source Forward Leakage | VDS =0V, VGS= 30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VDS =0V, VGS= -30V | -100 | nA |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=27.5A | 56 | m |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=27.5A | 69 | m |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 3.0 | V |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 5.0 | V |
| gfs | Forward Trans conductance | VDS=15V, ID =55A | 27 | S |
| Rg | Gate resistance | f = 1.0MHz | 2.7 | |
| Ciss | Input Capacitance | VGS = 0V VDS = 25V f = 1.0MHz | 3350 | pF |
| Coss | Output Capacitance | VGS = 0V VDS = 25V f = 1.0MHz | 463 | pF |
| Crss | Reverse Transfer Capacitance | VGS = 0V VDS = 25V f = 1.0MHz | 33 | pF |
| td(ON) | Turn-on Delay Time | ID =55A VDD = 125V RG =10 | 50 | ns |
| tr | Rise Time | ID =55A VDD = 125V RG =10 | 179 | ns |
| td(OFF) | Turn-Off Delay Time | ID =55A VDD = 125V RG =10 | 83 | ns |
| tf | Fall Time | ID =55A VDD = 125V RG =10 | 89 | ns |
| Qg | Total Gate Charge | ID =55A VDD =200V VGS = 10V | 63.6 | nC |
| Qgs | Gate to Source Charge | ID =55A VDD =200V VGS = 10V | 21.5 | nC |
| Qgd | Gate to Drain (Miller)Charge | ID =55A VDD =200V VGS = 10V | 25.8 | nC |
| IS | Continuous Source Current (Body Diode) | 55 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 220 | A | |
| VSD | Diode Forward Voltage | IS=55A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=55A,Tj = 25C dIF/dt=100A/us, VGS=0V | 242 | ns |
| Qrr | Reverse Recovery Charge | IS=55A,Tj = 25C dIF/dt=100A/us, VGS=0V | 2790 | nC |
| IRRM | Reverse Recovery Current | IS=55A,Tj = 25C dIF/dt=100A/us, VGS=0V | 23.1 | A |
| RJC | Junction-to-Case | 2.5 | /W | |
| RJA | Junction-to-Ambient | 62.5 | /W |
2508041620_Huixin-H40N25_C49823495.pdf
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