HXY MOSFET SI2333CDS HXY P Channel Enhancement Mode MOSFET ideal for uninterruptible power supplies
Key Attributes
Model Number:
SI2333CDS-HXY
Product Custom Attributes
Drain To Source Voltage:
18V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
250pF
Number:
1 P-Channel
Input Capacitance(Ciss):
980pF
Output Capacitance(Coss):
450pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
SI2333CDS-HXY
Package:
SOT-23
Product Description
SI2333CDS P-Channel Enhancement Mode MOSFET
The SI2333CDS is a P-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications, offering advantages like low on-resistance for efficient power handling. Its applications include battery protection, load switching, and uninterruptible power supplies.
Product Attributes
- Brand: HUAXUANYANG (HXY)
- Manufacturer: Shenzhen HuaXuanYang Electronics CO.,LTD
- Website: www.hxymos.com
- Package: SOT-23
- Marking: SI2333CDS
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDS | -18 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Drain Current-Continuous | ID | -6.5 | A | |
| Drain Current-Pulsed | IDM | -15 | A | Note 1 |
| Maximum Power Dissipation | PD | 2 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ||
| Thermal Resistance, Junction-to-Ambient | RJA | 74 | /W | Note 2 |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V, ID=-250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-20V,VGS=0V |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS=±8V,VDS=0V |
| Gate Threshold Voltage | VGS(th) | -0.45 To -1.0 | V | VDS=VGS,ID=-250A |
| Drain-Source On-State Resistance | RDS(ON) | 20 To 36 | m | VGS=-4.5V, ID=-4.1A (max 28m); VGS=-2.5V, ID=-3A (max 36m) |
| Forward Transconductance | gFS | 8.5 | S | VDS=-5V,ID=-3.5A |
| Input Capacitance | Clss | 980 | PF | VDS=-4V,VGS=0V, F=1.0MHz |
| Output Capacitance | Coss | 450 | PF | VDS=-4V,VGS=0V, F=1.0MHz |
| Reverse Transfer Capacitance | Crss | 250 | PF | VDS=-4V,VGS=0V, F=1.0MHz |
| Turn-on Delay Time | td(on) | 12 | nS | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 |
| Turn-on Rise Time | tr | 35 | nS | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 |
| Turn-Off Delay Time | td(off) | 30 | nS | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 |
| Turn-Off Fall Time | tf | 10 | nS | VDD=-4V,ID=-3.3A , RL=-1.2,VGEN=-4.5V,Rg=1 |
| Total Gate Charge | Qg | 7.8 | nC | VDS=-4V,ID=-4.1A,VGS=-4.5V |
| Gate-Source Charge | Qgs | 1.2 | nC | VDS=-4V,ID=-4.1A,VGS=-4.5V |
| Gate-Drain Charge | Qg | 1.6 | nC | VDS=-4V,ID=-4.1A,VGS=-4.5V |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-1.6A, Note 3 |
| Diode Forward Current | IS | 1.6 | A | Note 2 |
2509181704_HXY-MOSFET-SI2333CDS-HXY_C18198389.pdf
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