Power MOSFET Huixin H11N70D N Channel 700V 11A Low On Resistance TO 252 Package
Key Attributes
Model Number:
H11N70D
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
11A
RDS(on):
330mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
870pF
Pd - Power Dissipation:
101W
Output Capacitance(Coss):
54pF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
H11N70D
Package:
TO-252
Product Description
Product Overview
The H11N70D is an N-Channel Power MOSFET featuring new technology for high voltage applications. It offers low on-resistance, low conduction losses, and ultra-low gate charge for reduced driving requirements. This device is 100% avalanche tested and comes in a small TO-252 package.
Product Attributes
- Brand: HX (implied by marking)
- Certifications: UL 5 A (implied by markings on pages)
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
| Drain-Source Voltage | VDS | 700 | V | VGS=0V |
| Gate-Source Voltage | VGS | 30 | V | VDS=0V, AC (f>1 Hz) |
| Continuous Drain Current | ID (DC) | 11 | A | TC =25C |
| Continuous Drain Current | ID (DC) | 7 | A | TC=100C |
| Pulsed drain current | IDM (pluse) | 46 | A | Note 1 |
| Maximum Power Dissipation | PD | 101 | W | TC =25 |
| Derate above 25C | 0.97 | W/C | ||
| Single pulse avalanche energy | EAS | 144 | mJ | Note2 |
| Avalanche current | IAR | 6 | A | Note 1 |
| Repetitive Avalanche energy | EAR | 0.5 | mJ | tAR limited by Tjmax (Note 1) |
| Drain-Source voltage slope | dv/dt | 50 | V/ns | VDS 480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS 480 V,ISD<ID |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55...+150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS=0V, ID=250A |
| Zero Gate Voltage Drain Current | IDSS | 100 | A | VDS=700V,VGS=0V, Tc=25 |
| Zero Gate Voltage Drain Current | IDSS | A | VDS=700V,VGS=0V, Tc=125 | |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V,VDS=0V |
| Gate Threshold Voltage | VGS(th) | V | VDS=VGS,ID | |
| Drain-Source On-State Resistance | RDS(ON) | 330-380 | m | VGS=10V, ID=6A |
| Input Capacitance | Clss | pF | VDS=50V,VGS=0V, F=1.0MHz | |
| Output Capacitance | Coss | 870 | pF | |
| Reverse Transfer Capacitance | Crss | 54 | pF | |
| Total Gate Charge | Qg | 19 | nC | VDS=480V,ID=11.5A, VGS=10V |
| Gate-Source Charge | Qgs | 6 | nC | |
| Gate-Drain Charge | Qg | 6.5 | nC | |
| Turn-on Delay Time | td(on) | 12 | nS | VDD=420V,ID=5.5A, RG=3,VGS=10V |
| Turn-on Rise Time | tr | 9 | nS | |
| Turn-Off Delay Time | td(off) | 61 | nS | |
| Turn-Off Fall Time | tf | 11 | nS | |
| Source-drain current(Body Diode) | ISD | 11.5 | A | TC=25C |
| Pulsed Source-drain current(Body Diode) | ISDM | 46 | A | |
| Forward on voltage | VSD | 0.9 | V | Tj=25C,ISD=11.5A,VGS=0V |
| Reverse Recovery Time | trr | 220 | nS | Tj=25C,IF=5.8A, di/dt=100A/s |
| Reverse Recovery Charge | Qrr | 2.2 | uC | |
| Peak Reverse Recovery Current | Irrm | 19 | A | |
| Thermal Resistance,Junction-to-Case | RthJC | 1.24 | C /W | Maximum |
| Thermal Resistance,Junction-to-Ambient | RthJA | 62 | C /W | Maximum |
2509051530_Huixin-H11N70D_C51883382.pdf
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