HXY MOSFET Si7850DP HXY N Channel Enhancement Mode with Gate Voltage Operation Starting at 4.5 Volts
Key Attributes
Model Number:
Si7850DP-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
64pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
34.7W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
Si7850DP-HXY
Package:
DFN5x6-8L
Product Description
Product Description
The Si7850DP-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is ideally suited for battery protection and other switching applications.
Product Attributes
- Brand: HXY
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Product ID: Si7850DP-HXY
- Package: DFN5X6-8L
- Marking: Si7850DP-HXY
- Quantity per Pack: 5000 PCS
- Website: www.hxymos.com
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V |
| BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.063 | --- | V/ |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=15A | --- | 25 | --- | m |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=10A | --- | 20 | 24 | V |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| VGS(th) Temperature Coefficient | --- | --- | -5.24 | --- | mV/ |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| Drain-Source Leakage Current (IDSS) | VDS=48V , VGS=0V , TJ=55 | --- | --- | 5 | uA |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Forward Transconductance (gfs) | VDS=5V , ID=15A | --- | 17 | --- | S |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | |
| Total Gate Charge (Qg) | VDS=48V , VGS=4.5V , ID=12A | --- | 12.6 | --- | nC |
| Gate-Source Charge (Qgs) | --- | --- | 3.2 | --- | --- |
| Gate-Drain Charge (Qgd) | --- | --- | 6.3 | --- | --- |
| Turn-On Delay Time (Td(on)) | VDD=30V , VGS=10V , RG=3.3, ID=10A | --- | 8 | --- | ns |
| Rise Time (Tr) | --- | --- | 14.2 | --- | --- |
| Turn-Off Delay Time (Td(off)) | --- | --- | 24.4 | --- | --- |
| Fall Time (Tf) | --- | --- | 4.6 | --- | --- |
| Input Capacitance (Ciss) | VDS=15V , VGS=0V , f=1MHz | --- | 1378 | --- | pF |
| Output Capacitance (Coss) | --- | --- | 86 | --- | --- |
| Reverse Transfer Capacitance (Crss) | --- | --- | 64 | --- | --- |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 30 | A |
| Pulsed Source Current (ISM) | --- | --- | --- | 46 | A |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| Drain-Source Voltage (VDS) | --- | --- | --- | 60 | V |
| Gate-Source Voltage (VGS) | --- | --- | --- | 20 | V |
| Continuous Drain Current (ID@TC=25) | VGS @ 10V | --- | --- | 30 | A |
| Continuous Drain Current (ID@TC=100) | VGS @ 10V | --- | --- | 15 | A |
| Pulsed Drain Current (IDM) | --- | --- | --- | 46 | A |
| Single Pulse Avalanche Energy (EAS) | --- | --- | 25.5 | --- | mJ |
| Avalanche Current (IAS) | --- | --- | 22.6 | --- | A |
| Total Power Dissipation (PD@TC=25) | --- | --- | 34.7 | --- | W |
| Storage Temperature Range (TSTG) | --- | -55 | --- | 150 | |
| Operating Junction Temperature Range (TJ) | --- | -55 | --- | 150 | |
| Thermal Resistance Junction-ambient (RJA) | --- | --- | 62 | --- | /W |
| Thermal Resistance Junction-Case (RJC) | --- | --- | 3.6 | --- | /W |
2509181728_HXY-MOSFET-Si7850DP-HXY_C5148670.pdf
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