Power MOSFET Huixin HSCM0020065K Silicon Carbide N Channel with High Blocking Voltage and Power Conversion
Key Attributes
Model Number:
HSCM0020065K
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
92A
RDS(on):
20mΩ@18V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.6V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
312W
Gate Charge(Qg):
187nC@40A
Mfr. Part #:
HSCM0020065K
Package:
TO-247-4L
Product Description
Product Overview
The HSCM0020065K is an N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high blocking voltage with low on-resistance, high-speed switching capabilities with low capacitances, and is easy to parallel and simple to drive. These characteristics lead to higher system efficiency, reduced cooling requirements, increased power density, and the ability to operate at increased system switching frequencies. It is suitable for applications such as solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, and motor drives.
Product Attributes
- Brand: 6GMK
- Material: Silicon Carbide
- Certification: UL 7
- Package Type: TO-247-4L
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions |
| VDSmax | Drain-Source Voltage | 650 | V | VGS=0V, ID=100A |
| VGSmax | Gate-Source Voltage | -8/+22 | V | Absolute maximum values |
| VGSop | Gate-Source Voltage | -4/+18 | V | Recommended operational values |
| ID | Continuous Drain Current | 92 | A | VGS=18V, Tc=25 |
| ID | Continuous Drain Current | 64 | A | VGS=18V, Tc=100 |
| ID(pulse) | Pulsed Drain Current | 257 | A | Pulse width tp limited by TJmax |
| TJ, TSTG | Operating Junction and Storage Temperature | -55 to +175 | ||
| PD | Power Dissipation | 312 | W | TC=25C,TJ=175C |
| V(BR)DSS | Drain-Source Breakdown Voltage | 650 | V | VGS=0V, ID=100A |
| VGS(th) | Gate Threshold Voltage | 2.0 / 2.6 / 4.0 | V | VDS=VGS, ID=15mA |
| VGS(th) | Gate Threshold Voltage | / 1.8 / | V | VDS=VGS, ID=15mA, TJ=175 |
| IDSS | Zero Gate Voltage Drain Current | / 1 / 100 | A | VDS=650V, VGS=0V |
| IGSS+ | Gate-Source Leakage Current | / 10 / 250 | nA | VDS=0V, VGS=22V |
| IGSS- | Gate-Source Leakage Current | / 10 / 250 | nA | VDS=0V, VGS=-8V |
| RDS(on) | Drain-Source On-State Resistance | / 20 / 30 | m | VGS=18V, ID=50A |
| RDS(on) | Drain-Source On-State Resistance | / 28 / | m | VGS=18V, ID=50A, TJ=175 |
| gfs | Transconductance | / 35 / | S | VDS=20V, ID=50A |
| gfs | Transconductance | / 31.6 / | S | VDS=20V, ID=50A, TJ=175 |
| Ciss | Input Capacitance | / 3180 / | pF | VGS=0V, VDS=650V, f=1MHz, VAC=25mV |
| Coss | Output Capacitance | / 281 / | pF | f=1MHz, VAC=25mV |
| Crss | Reverse Transfer Capacitance | / 33 / | pF | f=1MHz, VAC=25mV |
| Eoss | Coss Stored Energy | / 41 / | J | |
| RG(int) | Internal Gate Resistance | / 3.2 / | ||
| QGS | Gate to Source Charge | / 49 / | nC | VDS=400V, VGS=-4V/18V, ID=40A |
| QGD | Gate to Drain Charge | / 31 / | nC | VDS=400V, VGS=-4V/18V, ID=40A |
| QG | Total Gate Charge | / 187 / | nC | VDS=400V, VGS=-4V/18V, ID=40A |
| VSD | Diode Forward Voltage | 4.2 / | V | VGS=-4V, ISD=25A |
| VSD | Diode Forward Voltage | 3.9 / | V | VGS=-4V, ISD=25A, TJ=175 |
| IS | Continuous Diode Forward Current | / 92 | A | TC=25 |
| trr | Reverse Recover Time | 26 / | ns | VR=400V, ISD=40A |
| Qrr | Reverse Recovery Charge | 58 / | nC | VR=400V, ISD=40A |
| Irrm | Peak Reverse Recovery Current | 3.4 / | A | VR=400V, ISD=40A |
| RJC | Thermal Resistance from Junction to Case | 0.48 | /W | |
| RJA | Thermal Resistance From Junction to Ambient | 40 | /W | |
| td(on) | Turn-On Delay Time | / / 12 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| tr | Rise Time | / / 18 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| td(off) | Turn-Off Delay Time | / / 25 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| tf | Fall Time | / / 8 | ns | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| Eon | Turn-On Switching Energy | / 121 / | J | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
| Eoff | Turn-Off Switching Energy | / 53 / | J | VDS=400V, VGS=-4V/18V, ID=40A, RG(ext) =2.5,L=59H,TJ=175 |
2508201709_Huixin-HSCM0020065K_C49823493.pdf
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