N Channel Enhancement Mode HXY MOSFET SI2308 Suitable for Battery Protection Load Switching Applications
Key Attributes
Model Number:
SI2308
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
295pF@25V
Gate Charge(Qg):
3.9nC@27V
Mfr. Part #:
SI2308
Package:
SOT-23
Product Description
Product Overview
The SI2308 is an N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS. Utilizing advanced trench technology, this device offers excellent RDS(ON) and is suitable for applications such as battery protection and load switching, including PWM applications and uninterruptible power supplies.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Model: SI2308
- Website: www.hxymos.com
- Package: SOT-23
- Marking: MS08/6003
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| General Features | |||||
| Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Drain Current-Continuous (ID) | 2.5 | A | |||
| Drain Current-Pulsed (IDM) | Note 1 | 10 | A | ||
| Maximum Power Dissipation (PD) | 1.25 | W | |||
| Operating Junction and Storage Temperature Range (TJ, TSTG) | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | Note 2 | 62.5 | /W | ||
| Static Parameters | |||||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=250uA | 60 | V | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250uA | 1.0 | 2 | V | |
| Gate Leakage Current (IGSS) | VDS=0V, VGS=±12V | ±100 | nA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=44V, VGS=0 | 1 | 5 | uA | |
| Zero Gate Voltage Drain Current (IDSS) | VDS=44V, VGS=0, TJ=85 | 10 | uA | ||
| On-State Drain Current (ID(ON)) | VDS≥5V, VGS=4.5V | 10 | A | ||
| Drain-Source On-Resistance (RDS(ON)) | VGS=10V, ID=2.5A | <85 | mΩ | ||
| Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V, ID=1.8A | <85 | mΩ | ||
| Forward Transconductance (Gfs) | VDS=5V, ID=2.5A | 3.5 | S | ||
| Source-Drain Diode | |||||
| Diode Forward Voltage (VSD) | IS=2.5A, GS=0V | 1.2 | V | ||
| Dynamic Parameters | |||||
| Total Gate Charge (Qg) | VDS=27V, VGS=4.5V, ID=2.1A | 3.9 | nC | ||
| Gate-Source Charge (Qgs) | VDS=27V, VGS=4.5V, ID=2.1A | 2.1 | nC | ||
| Gate-Drain Charge (Qgd) | VDS=27V, VGS=4.5V, ID=2.1A | 0.8 | nC | ||
| Input Capacitance (Ciss) | VDS=25V, VGS=0V, f=1MHz | 103 | pF | ||
| Output Capacitance (Coss) | VDS=25V, VGS=0V, f=1MHz | 295 | pF | ||
| Reverse Transfer Capacitance (Crss) | VDS=25V, VGS=0V, f=1MHz | 15 | pF | ||
| Turn-On Time (Td(on)) | VDS=27V, ID=2.5A, VGEN=4.5V, RG=6Ω | 3.6 | nS | ||
| Turn-On Rise Time (Tr) | VDS=27V, ID=2.5A, VGEN=4.5V, RG=6Ω | 32 | nS | ||
| Turn-Off Delay Time (Td(off)) | VDS=27V, ID=2.5A, VGEN=4.5V, RG=6Ω | nS | |||
| Turn-Off Fall Time (Tf) | VDS=27V, ID=2.5A, VGEN=4.5V, RG=6Ω | nS | |||
2509181605_HXY-MOSFET-SI2308_C5337194.pdf
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