N Channel Enhancement Mode MOSFET HXY MOSFET AOD4184 HXY with Low Gate Charge and Trench Technology
Key Attributes
Model Number:
AOD4184-HXY
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
190pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
1.8nF@20V
Pd - Power Dissipation:
64.6W
Gate Charge(Qg):
29nC
Mfr. Part #:
AOD4184-HXY
Package:
TO-252-2L
Product Description
Product Overview
The AOD4184-HXY is an N-Channel Enhancement Mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge, capable of operating with gate voltages as low as 4.5V. It is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUA XUAN YANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Model: AOD4184-HXY
- Package: TO-252-2L (TO-252-2(DPAK))
- Marking: HXY OD4184 xxxxxx
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Continuous Drain Current, VGS @ 10V | ID@TC=25 | 1 | 60 | A | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=100 | 1 | 45 | A | ||
| Pulsed Drain Current | IDM | 2 | 220 | A | ||
| Single Pulse Avalanche Energy | EAS | 3 | 416.1 | mJ | ||
| Avalanche Current | IAS | 39 | A | |||
| Total Power Dissipation | PD@TC=25 | 4 | 64.6 | W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Thermal Resistance Junction-ambient | RJA | 1 | 62 | /W | ||
| Thermal Resistance Junction-Case | RJC | 1 | 2.8 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 40 | 45 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.2 | 1.6 | 2.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | - | 7.0 | 8.5 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 15 | 18 | m |
| Forward Transconductance | gFS | VDS=10V,ID=20A | 15 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=20V,VGS=0V, F=1.0MHz | - | 1800 | - | PF |
| Output Capacitance | Coss | - | 280 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 190 | - | PF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=20V,ID=2A,RL=1, VGS=10V,RG=3 | - | 6.4 | - | nS |
| Turn-on Rise Time | tr | - | 17.2 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 29.6 | - | nS | |
| Turn-Off Fall Time | tf | - | 16.8 | - | nS | |
| Total Gate Charge | Qg | VDS=20V,ID=20A, VGS=10V | - | 29 | - | nC |
| Gate-Source Charge | Qgs | - | 4.5 | - | nC | |
| Gate-Drain Charge | Qg | - | 6.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=10A | - | 1.2 | - | V |
| Diode Forward Current | IS | 2 | - | - | 68 | A |
| Reverse Recovery Time | trr | TJ = 25C, IF = 20A, di/dt = 100A/s | - | 29 | - | nS |
| Reverse Recovery Charge | Qrr | - | 26 | - | nC | |
2509181605_HXY-MOSFET-AOD4184-HXY_C5337192.pdf
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