Switching Solutions with HXY MOSFET AOD4185 P Channel Enhancement Mode and Low Gate Charge Characteristics
Key Attributes
Model Number:
AOD4185
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
19mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
172pF
Number:
1 P-Channel
Output Capacitance(Coss):
190pF
Pd - Power Dissipation:
40.3W
Input Capacitance(Ciss):
2.525nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
AOD4185
Package:
TO-252-2L
Product Description
Product Overview
The AOD4185 is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS (HXY). It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD (HXY)
- Product ID: AOD4185
- Origin: Shenzhen, China
- Package: TO-252(DPAK) / TO252-2L
- Website: www.hxymos.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250A | -40 | - | - | V |
| Gate-Body Leakage current | lGSS | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | TJ=25, VDS = -40V, VGS = 0V | - | - | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | TJ=100, VDS = -40V, VGS = 0V | - | - | -100 | A |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = -250A | -1.0 | -1.5 | -2.2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -20A | - | 13.5 | 19 | m |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -15A | - | 19.5 | 25 | m |
| Forward Transconductance | gfs | VDS = -10V, ID = -20A | - | 44 | - | S |
| Input Capacitance | Ciss | VDS = -20V, VGS =0V, f =1MHz | - | 2525 | - | pF |
| Output Capacitance | Coss | VDS = -20V, VGS =0V, f =1MHz | - | 190 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = -20V, VGS =0V, f =1MHz | - | 172 | - | pF |
| Gate Resistance | Rg | f =1MHz | - | 10 | - | |
| Total Gate Charge | Qg | VGS = -10V,VDS = -20V, ID= -20A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | VGS = -10V,VDS = -20V, ID= -20A | - | 5.5 | - | - |
| Gate-Drain Charge | Qgd | VGS = -10V,VDS = -20V, ID= -20A | - | 8 | - | - |
| Turn-On Delay Time | td(on) | VGS = -10V, VDD = -20V, RG = 3, ID= -20A | - | 14.5 | - | ns |
| Rise Time | tr | VGS = -10V, VDD = -20V, RG = 3, ID= -20A | - | 20.2 | - | ns |
| Turn-Off Delay Time | td(off) | VGS = -10V, VDD = -20V, RG = 3, ID= -20A | - | 32 | - | ns |
| Fall Time | tf | VGS = -10V, VDD = -20V, RG = 3, ID= -20A | - | 10 | - | ns |
| Diode Forward Voltage | VSD | IS = -20A, VGS = 0V | - | - | -1.2 | V |
| Continuous Source Current | IS | TC=25C | - | - | -40 | A |
Absolute Maximum Ratings
| Parameter | Rating | Units |
| Drain-Source Voltage | -40 | V |
| Gate-Source Voltage | 20 | V |
| Continuous Drain Current, VGS @ 10V (TC=25) | -40 | A |
| Continuous Drain Current, VGS @ 10V (TC=100) | -22 | A |
| Pulsed Drain Current | -140 | A |
| Total Power Dissipation (TC=25) | 40.3 | W |
| Storage Temperature Range | -55 to 150 | |
| Operating Junction Temperature Range | -55 to 150 | |
| Thermal Resistance Junction-ambient | 66 | /W |
| Thermal Resistance Junction-Case | 3.1 | /W |
2509181605_HXY-MOSFET-AOD4185_C5261064.pdf
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