HXY MOSFET AOD442 HXY Featuring Low RDS ON and Gate Voltage Operation Starting at 4.5V for Switching
Key Attributes
Model Number:
AOD442-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
97pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.423nF@15V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
19.3nC@4.5V
Mfr. Part #:
AOD442-HXY
Package:
TO-252-2L
Product Description
Product Overview
The AOD442-HXY is an N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and general switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS
- Origin: Shenzhen, China
- Model: AOD442-HXY
- Package: TO-252-2L (TO-252-2(DPAK))
- Marking: 50N06 XXXX YYYY
- Ordering Information: Qty(PCS) 2500
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 60 | - | - | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | - | 0.057 | - | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | - | 11 | 15 | m |
| VGS=4.5V , ID=10A | - | 15 | 20 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | - | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | - | - | -5.68 | - | mV/ |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25 | - | - | 1 | uA |
| VDS=48V , VGS=0V , TJ=55 | - | - | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | - | - | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=15A | - | 45 | - | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | - | 1.7 | - | |
| Qg | Total Gate Charge | VDS=48V , VGS=4.5V , ID=15A | - | 19.3 | - | nC |
| VDS=48V , VGS=10V , ID=50A | - | 43.9 | - | nC | ||
| Qgs | Gate-Source Charge | - | - | 7.1 | - | nC |
| Qgd | Gate-Drain Charge | - | - | 7.6 | - | nC |
| Td(on) | Turn-On Delay Time | VDD=30V , VGS=10V , RG=3.3 , ID=15A | - | 7.2 | - | ns |
| VDD=30V , VGS=4.5V , RG=3.3 , ID=15A | - | 15.1 | - | ns | ||
| Tr | Rise Time | - | - | 50 | - | ns |
| Td(off) | Turn-Off Delay Time | VDD=30V , VGS=10V , RG=3.3 , ID=15A | - | 36.4 | - | ns |
| VDD=30V , VGS=4.5V , RG=3.3 , ID=15A | - | 30.6 | - | ns | ||
| Tf | Fall Time | - | - | 7.6 | - | ns |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | - | 2423 | - | pF |
| VDS=15V , VGS=0V , f=1MHz | - | 1636 | - | pF | ||
| VDS=15V , VGS=0V , f=1MHz | - | 460 | - | pF | ||
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | - | 145 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | - | 97 | - | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | - | - | 35 | A |
| ISM | Pulsed Source Current | - | - | - | 80 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=A , TJ=25 | - | - | 1 | V |
| trr | Reverse Recovery Time | IF=15A , dI/dt=100A/s , TJ=25 | - | 16.3 | - | nS |
| Qrr | Reverse Recovery Charge | IF=15A , dI/dt=100A/s , TJ=25 | - | 11 | - | nC |
2509181601_HXY-MOSFET-AOD442-HXY_C4748751.pdf
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