Dual N Channel Enhancement Mode MOSFET HXY MOSFET AO6800 HXY with Low Gate Charge and Excellent RDS
Key Attributes
Model Number:
AO6800-HXY
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
38mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
33pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
233pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
3nC@10V
Mfr. Part #:
AO6800-HXY
Package:
SOT-23-6L
Product Description
Product Overview
The AO6800-HXY is a Dual N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and general switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen
- Model: AO6800-HXY
- Package: SOT-23-6L
- Type: Dual N-Channel MOSFET
- Mode: Enhancement Mode
- Website: www.hxymos.com
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | +20 | V | |||
| ID@TA=25 | Drain Current, VGS @ 4.5V | 4.5 | A | |||
| IDM | Pulsed Drain Current | 15 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.25 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Rthj-a | Maximum Thermal Resistance, Junction-ambient | 125 | /W | |||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=4A | - | 29 | 38 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=3A | - | 45 | 65 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | - | 233 | - | pF |
| Coss | Output Capacitance | - | 44 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 33 | - | pF | |
| Qg | Total Gate Charge | VDS=15V, ID=2A, VGS=10V | - | 3 | - | nC |
| Qgs | Gate-Source Charge | - | 0.5 | - | nC | |
| Qgd | Gate-Drain(Miller) Charge | - | 0.8 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDS=15V, ID=4A, RGEN=3, VGS=10V | - | 4 | - | ns |
| tr | Turn-on Rise Time | - | 2.1 | - | ns | |
| td(off) | Turn-off Delay Time | - | 15 | - | ns | |
| tf | Turn-off Fall Time | - | 3.2 | - | ns | |
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 4.5 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=4A | - | - | 1.2 | V |
2509181602_HXY-MOSFET-AO6800-HXY_C5148655.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
