Low Gate Voltage N Channel MOSFET HXY MOSFET AO3400 HXY Suitable for Battery Protection Applications
Key Attributes
Model Number:
AO3400-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
78pF
Number:
1 N-channel
Input Capacitance(Ciss):
825pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
AO3400-HXY
Package:
SOT-23
Product Description
Product Overview
The AO3400-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HUA XUAN YANG ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Product ID: AO3400-HXY
- Package: SOT-23
- Marking: A09T
- Quantity: 3000 PCS
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | 33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 0.9 | 1.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=2.5V, ID=4A | - | 41 | 55 | m |
| VGS=4.5V, ID=5A | - | 32 | 42 | m | ||
| VGS=10V, ID=5.8A | - | 28 | 30 | |||
| Forward Transconductance | gFS | VDS=5V,ID=5A | 10 | - | - | S |
| Input Capacitance | Clss | VDS=15V,VGS=0V, F=1.0MHz | - | 825 | - | PF |
| Output Capacitance | Coss | VDS=15V,VGS=0V, F=1.0MHz | - | 100 | - | PF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V, F=1.0MHz | - | 78 | - | PF |
| Turn-on Delay Time | td(on) | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 3.3 | - | nS |
| VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 4.8 | - | nS | ||
| Turn-Off Delay Time | td(off) | VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 26 | - | nS |
| VDD=15V, RL=2.7, VGS=10V,RGEN=3 | - | 4 | - | nS | ||
| Total Gate Charge | Qg | VDS=15V,ID=5.8A, VGS=4.5V | - | 10 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=5.8A, VGS=4.5V | - | 1.6 | - | nC |
| Gate-Drain Charge | Qg | VDS=15V,ID=5.8A, VGS=4.5V | - | 3.1 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=5.8A | - | - | 1.2 | V |
| Diode Forward Current | IS | VGS=0V,IS=5.8A | - | - | 5.8 | A |
| Drain-Source Voltage | VDS | TA=25 | - | - | 30 | V |
| Gate-Source Voltage | VGS | TA=25 | - | - | 12 | V |
| Drain Current-Continuous | ID | TA=25 | - | - | 5.8 | A |
| Drain Current-Pulsed | IDM | TA=25 | - | - | 30 | A |
| Maximum Power Dissipation | PD | TA=25 | - | - | 1.4 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | |
| Thermal Resistance,Junction-to-Ambient | RJA | TA=25 | - | 89 | - | /W |
2509181601_HXY-MOSFET-AO3400-HXY_C4748804.pdf
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