HXY MOSFET AON7264E HXY N Channel Enhancement Mode MOSFET with Excellent RDS ON and Low Gate Charge
Key Attributes
Model Number:
AON7264E-HXY
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
930pF@25V
Pd - Power Dissipation:
30W
Mfr. Part #:
AON7264E-HXY
Package:
DFN3x3-8L
Product Description
Product Overview
The AON7264E is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for battery protection and general switching applications.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Package: DFN3X3-8L/DFN-8(3x3)
- Marking: 40N06 XXYY
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V | - | - | 1.0 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=20A | - | 12 | 15 | m |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=10A | - | 15 | 20 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 930 | - | pF |
| Coss | Output Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 230 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS=25V, VGS=0V, f=1.0MHz | - | 8 | - | pF |
| Qg | Total Gate Charge | VDS=30V, ID=20A, VGS=10V | - | 22 | - | nC |
| Qgs | Gate-Source Charge | VDS=30V, ID=20A, VGS=10V | - | 4.5 | - | nC |
| Qgd | Gate-Drain(Miller) Charge | VDS=30V, ID=20A, VGS=10V | - | 3.5 | - | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 4.5 | - | ns |
| tr | Turn-on Rise Time | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 2.7 | - | ns |
| td(off) | Turn-off Delay Time | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 13.8 | - | ns |
| tf | Turn-off Fall Time | VDD=30V, ID=20A, RG=1.6, VGS=10V | - | 2.7 | - | ns |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | - | 40 | A |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | - | 150 | A |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=30A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | TJ=25, IF=20A,dI/dt=100A/s | - | 18 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | TJ=25, IF=20A,dI/dt=100A/s | - | 12 | - | nC |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | - | - | - | 60 | V |
| VGS | Gate-Source Voltage | - | - | 20 | - | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | - | - | - | 40 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | - | - | - | 20 | A |
| IDM | Pulsed Drain Current | - | - | - | 150 | A |
| EAS | Single Pulse Avalanche Energy | - | - | - | 36 | mJ |
| PD@TC=25 | Total Power Dissipation | - | - | - | 30 | W |
| TSTG | Storage Temperature Range | - | -55 | - | 150 | |
| TJ | Operating Junction Temperature Range | - | -55 | - | 150 | |
| RJA | Thermal Resistance Junction-ambient | - | - | 62 | - | /W |
| RJC | Thermal Resistance Junction-Case | - | - | 2.5 | - | /W |
2509181740_HXY-MOSFET-AON7264E-HXY_C6285769.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
