Low Gate Charge N Channel MOSFET HXY MOSFET AON6508 HXY Suitable for Battery Protection Applications
Key Attributes
Model Number:
AON6508-HXY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Number:
1 N-channel
Pd - Power Dissipation:
187W
Gate Charge(Qg):
56.9nC@10V
Mfr. Part #:
AON6508-HXY
Package:
DFN5x6-8L
Product Description
AON6508 N-Channel Enhancement Mode MOSFET
The AON6508 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
Product Attributes
- Brand: HXY (Shenzhen HuaXuanYang Electronics CO.,LTD)
- Origin: Shenzhen, China
- Package: DFN5X6-8L (PDFN-8(5.8x4.9))
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 150 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 80 | A | |||
| IDM | Pulsed Drain Current | 160 | A | |||
| EAS | Single Pulse Avalanche Energy | 180 | mJ | |||
| IAS | Avalanche Current | 60 | A | |||
| PD@TC=25 | Total Power Dissipation | 187 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case | 1.1 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=30A | 2.4 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=15A | 3.2 | VGS | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2.5 | V | |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| Qg | Total Gate Charge | VDS=15V , VGS=10V , ID=15A | 56.9 | nC | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 124.6 | pF | ||
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | 15.8 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | 4.345 | pF | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 150 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2509181714_HXY-MOSFET-AON6508-HXY_C22366646.pdf
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