N Channel Enhancement Mode HXY MOSFET BSS123 Suitable for PWM and Uninterruptible Power Supply Systems
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@10V,0.17A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
7pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
30pF@50V
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
BSS123 N-Channel Enhancement Mode MOSFET
The BSS123 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM applications. It is ideal for battery protection, load switching, and uninterruptible power supply systems.
Product Attributes
- Brand: HUAXUANYANG ELECTRONICS CO.,LTD
- Origin: Shenzhen HuaXuanYang Electronics CO.,LTD
- Product ID: BSS123
- Pack Marking: BSS123
- Package: SOT-23
- ESD Rating: 1500V HBM
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 100 | V | |||
| VGS (Gate-Source Voltage) | 20 | V | |||
| ID (Drain Current-Continuous) | 0.17 | A | |||
| IDM (Drain Current-Pulsed) | (Note 1) | 0.68 | A | ||
| PD (Maximum Power Dissipation) | (TA=25) | 0.35 | W | ||
| TJ, TSTG (Operating Junction and Storage Temperature Range) | -55 | 150 | |||
| RJA (Thermal Resistance, Junction-to-Ambient) | (Note 2) | 350 | /W | ||
| V(BR)DSS (Drain-source breakdown voltage) | VGS=0, ID=250A | 100 | V | ||
| VGS(th) (Gate threshold voltage) | VDS=VGS, ID=250A | 1.5 | 2.5 | V | |
| IGSS (Gate-body leakage current) | VDS=0, VGS=20V | 10 | A | ||
| IDSS (Zero gate voltage drain current) | VDS=100V, VGS=0V | 1 | A | ||
| RDS(on) (Drain-source on-resistance) | VGS=10V, ID=0.17A | 6.0 | |||
| RDS(on) (Drain-source on-resistance) | VGS=4.5V, ID=0.17A | 9.0 | |||
| VSD (Diode forward voltage) | IS=0.2A,VGS=0V | 1.0 | V | ||
| Ciss (Input capacitance) | VDS=50V, VGS=0V, f=1MHz | 30 | pF | ||
| Coss (Output capacitance) | VDS=50V, VGS=0V, f=1MHz | 10 | pF | ||
| Crss (Reverse transfer capacitance) | VDS=50V, VGS=0V, f=1MHz | 7 | pF | ||
| td(on) (Turn-on delay time) | VGS=10V,VDS=50V ID=200mA, RGEN=6 | 1.7 | nS | ||
| tr (Rise time) | VGS=10V,VDS=50V ID=200mA, RGEN=6 | 9 | nS | ||
| td(off) (Turn-off delay time) | VGS=10V,VDS=50V ID=200mA, RGEN=6 | 17 | nS | ||
| tf (Fall time) | VGS=10V,VDS=50V ID=200mA, RGEN=6 | 7 | nS |
2509181603_HXY-MOSFET-BSS123_C5184436.pdf
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.